Peculiarities of scintillation materials based on ZnS—ZnTe solid solutions

by Katrunov, K., Lalaiants, O., Baumer, V., Galkin, S., Galchinetskii, L., Brilyova, Ye.
Published 2013

Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors

by Katrunov, K., Starzhinskiy, N., Grinyov, B., Galchinetskii, L., Bendeberya, G., Bondarenko, E.
Published 2008

Small-grained detector of ionizing radiation based on ZnSe(Te)

by Volkov, V.G., Gavrilyuk, V.P., Galchinetskii, L.P., Grinyov, B.V., Katrunov, K.A., Ryzhikov, V.D.
Published 2000

Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes

by Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.
Published 2008

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

by Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Published 1999