X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates

von N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin
Veröffentlicht 2013

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

von V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich
Veröffentlicht 2010

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

von V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich
Veröffentlicht 2014

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts

von A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin
Veröffentlicht 2010

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet
Veröffentlicht 2012

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts

von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo
Veröffentlicht 2013