Peculiarities of scintillation materials based on ZnS—ZnTe solid solutions

von Katrunov, K., Lalaiants, O., Baumer, V., Galkin, S., Galchinetskii, L., Brilyova, Ye.
Veröffentlicht 2013

Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors

von Katrunov, K., Starzhinskiy, N., Grinyov, B., Galchinetskii, L., Bendeberya, G., Bondarenko, E.
Veröffentlicht 2008

Small-grained detector of ionizing radiation based on ZnSe(Te)

von Volkov, V.G., Gavrilyuk, V.P., Galchinetskii, L.P., Grinyov, B.V., Katrunov, K.A., Ryzhikov, V.D.
Veröffentlicht 2000

Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes

von Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.
Veröffentlicht 2008

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

von Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Veröffentlicht 1999