Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells

von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Veröffentlicht 2013

The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells

von S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Veröffentlicht 2013

On the question of critical exponents universality in the quantum Hall effect regime

von Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin
Veröffentlicht 2019

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures

von A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Veröffentlicht 2017

Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination

von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin
Veröffentlicht 2015

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination

von Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin
Veröffentlicht 2015

Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime

von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin
Veröffentlicht 2013

The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide

von A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov
Veröffentlicht 2017