Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

by Yodgorova, D.M., Karimov, A.V.
Published 2004

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction

by Karimov, A.V., Yodgorova, D.M.
Published 2005

Research of structures with corrugated photoreceiving surface

by Karimov, A.V., Yodgorova, D.M., Yakubov, E.N.
Published 2004

Determination of potential distribution in a three-barrier structure

by Yodgorova, D.M., Zoirova, L.X., Karimov, A.V.
Published 2006

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base

by Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.
Published 2008

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

by Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Published 2005

Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

by Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Saidova, R.A., Yakubov, A.A.
Published 2008