Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals

von H. P. Haidar, P. I. Baranskyi
Veröffentlicht 2016

Experimental proof of the shape constancy for isoenergetic ellipsoids in n–Ge under strong uniaxial elastic deformation

von H. P. Haidar, P. I. Baranskyi
Veröffentlicht 2015

Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2014

Magnetotenso- and tensomagnetoresistance of n-Ge

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2016

Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2015

Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n-Si

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2014

Concentration and temperature dependences of thermoelectric characteristics of the elastically deformed silicon

von H. P. Haidar, P. I. Baranskyi
Veröffentlicht 2018

Experimental evidence of invariability in the shape of n‑Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains

von H. P. Haidar, P. I. Baranskyi
Veröffentlicht 2017

Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals

von H. P. Haidar, P. I. Baranskyi
Veröffentlicht 2017

Physical factors that cause the anisotropy of thermoelectromotive and the anisotropy of mobility in multivalley semiconductors

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2013

Radiation and thermal stability of thin layers, he-terosystems and nanostructures, created on the basis of elementary semiconductors and semiconductor com-pounds

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2010

About peculiarities of the anisotropy of thermoelectric effects in semiconductors, connected with the specific manifestations of many valleys

von P. I. Baranskyi, H. P. Haidar
Veröffentlicht 2012

Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting

von Yu. A. Asnis, P. I. Baranskyi, V. M. Babych, N. V. Piskun, I. I. Statkevych
Veröffentlicht 2011