Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect

von S. V. Luniov, L. I. Panasiuk, S. A. Fedosov
Veröffentlicht 2012

Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect

von S. V. Lunov, L. I. Panasiuk, S. A. Fedosov
Veröffentlicht 2012

Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity

von D. A. Zakharchuk, Y. V. Koval, L. V. Yashchynskiy, S. A. Fedosov
Veröffentlicht 2014