Revealing the hopping mechanism of conduction in heavily doped silicon diodes

von Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.
Veröffentlicht 2005

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

von Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Veröffentlicht 2007

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

von Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Veröffentlicht 2009

Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures

von Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.
Veröffentlicht 2000

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

von Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Veröffentlicht 2003

Negative magnetoresistance of heavily doped silicon p-n junction

von Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
Veröffentlicht 2011

Optimized calibration of cryogenic silicon thermodiodes

von Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.
Veröffentlicht 2011

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

von Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.
Veröffentlicht 2012

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics

von Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, N.I.
Veröffentlicht 2010

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

von Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
Veröffentlicht 2014