Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching

von Tomashyk, V.M., Kravtsova, A.S., Tomashyk, Z.F., Stratiychuk, I.B., Galkin, S.M.
Veröffentlicht 2013

Chemical polishing of InAs, InSb, GaAs and GaSb

von Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.
Veröffentlicht 2017

Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

von Pavlovich, I.I., Tomashik, Z.F., Stratiychuk, I.B., Tomashik, V.M., Savchuk, O.A., Kravtsova, A.S.
Veröffentlicht 2011

Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition

von Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.
Veröffentlicht 2018

Nanodimensional formations on the CdTe and ZnₓCd₁₋ₓTe surfaces at chemical etching

von Tomashyk, Z.F., Tomashyk, V.M., Hnativ, I.I., Stratiychuk, I.B., Moravec, P., Franc, J., Ivanitska, V.
Veröffentlicht 2008

Peculiarities of ZnSe dissolution in H₂O₂—HBr -ethylene glycol (oxalic acid) etchant compositions

von Kravtsova, A.S., Tomashyk, V.M., Tomashyk, Z.F., Stratiychuk, I.B., Kuryk, A.O., Kalytchuk, S.M., Galkin, S.M.
Veröffentlicht 2013