The injection photo diode on the basis of nSi-nCdS-n⁺CdS heterostructures
It is shown that the nSi-nCdS-n⁺CdS heterostructures in operative (carrying) direction of current, while being exposed to low intensity radiation, operate as injection photodiodes. Their current sensitivity is Sλ ≈ 2.12 A/W at λ = 0.625 µm, which effectively represents a 4.2 increase in compare...
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| Datum: | 2013 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Науковий фізико-технологічний центр МОН та НАН України
2013
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| Schriftenreihe: | Физическая инженерия поверхности |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/100309 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The injection photo diode on the basis of nSi-nCdS-n⁺CdS heterostructures / I.B. Sapaev // Физическая инженерия поверхности. — 2013. — Т. 11, № 3. — С. 260–262. — Бібліогр.: 5 назв. — англ. |