Pulsed Laser Deposition of Thin Iron and Chromium Silicide Films with Large Thermoelectromotive Force Coefficient
Nanostructures in the form of thin films exhibiting the semiconductor properties with a narrow energy-band gap are deposited from the CrSi₂ and β-FeSi₂ targets by means of the pulsed laser deposition (PLD) assisted with an excimer KrF laser.
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| Datum: | 2014 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут металофізики ім. Г.В. Курдюмова НАН України
2014
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| Schriftenreihe: | Наносистеми, наноматеріали, нанотехнології |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/107205 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Pulsed Laser Deposition of Thin Iron and Chromium Silicide Films with Large Thermoelectromotive Force Coefficient / S.A. Mulenko // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2014. — Т. 12, № 3. — С. 623–632. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Nanostructures in the form of thin films exhibiting the semiconductor properties with a narrow energy-band gap are deposited from the CrSi₂ and β-FeSi₂ targets by means of the pulsed laser deposition (PLD) assisted with an excimer KrF laser. |
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