Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation
The manufacturing of elements of micro-strip metal detectors (MSMD) for ionizing radiation applying plasma-chemistry technologies for etching of multilayer structures is described in details. Results obtained by using plasma-chemistry technologies for MSMD production as well as its advantages in com...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2007
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| Цитувати: | Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation / V.M. Pugatch, V.L. Perevertaylo, O.A. Fedorovich, A.G. Borisenko, E.G. Kostin, M.P. Kruglenko, B.P. Polozov, L.I. Tarasenko // Вопросы атомной науки и техники. — 2007. — № 1. — С. 173-175. — Бібліогр.: 4 назв. — англ. |
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irk-123456789-1105032017-01-05T03:04:08Z Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation Pugatch, V.M. Perevertaylo, V.L. Fedorovich, O.A. Borisenko, A.G. Kostin, E.G. Kruglenko, M.P. Polozov, B.P. Tarasenko, L.I. Low temperature plasma and plasma technologies The manufacturing of elements of micro-strip metal detectors (MSMD) for ionizing radiation applying plasma-chemistry technologies for etching of multilayer structures is described in details. Results obtained by using plasma-chemistry technologies for MSMD production as well as its advantages in comparison with a wet chemical etching, problems arising and possible ways of their elimination are presented. Приведено детальний опис технології виготовлення елементів мікростріпових металевих детекторів іонізуючого випромінювання (МСМД) з застосуванням плазмохімічного травлення багатошарових структур. Представлено результати застосування плазмохімічної технології виготовлення МСМД, її переваги перед хімічним травленням, а також виникаючі при цьому проблеми та можливі шляхи їх усунення. Приводится подробное описание изготовления элементов микростриповых металлических детекторов (МСМД) ионизирующих излучений с использованием плазмохимической технологии травления многослойных структур. Показаны результаты использования плазмохимии в технологии изготовления МСМД, её преимущества в сравнении с применением химического травления, а также возникающие при этом проблемы и возможные пути их устранения. 2007 Article Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation / V.M. Pugatch, V.L. Perevertaylo, O.A. Fedorovich, A.G. Borisenko, E.G. Kostin, M.P. Kruglenko, B.P. Polozov, L.I. Tarasenko // Вопросы атомной науки и техники. — 2007. — № 1. — С. 173-175. — Бібліогр.: 4 назв. — англ. 1562-6016 PACS: 52.77.Bn, 81.65.Cf, 85.40.-e, 85.40.Hp http://dspace.nbuv.gov.ua/handle/123456789/110503 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
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Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies |
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Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies Pugatch, V.M. Perevertaylo, V.L. Fedorovich, O.A. Borisenko, A.G. Kostin, E.G. Kruglenko, M.P. Polozov, B.P. Tarasenko, L.I. Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation Вопросы атомной науки и техники |
| description |
The manufacturing of elements of micro-strip metal detectors (MSMD) for ionizing radiation applying plasma-chemistry technologies for etching of multilayer structures is described in details. Results obtained by using plasma-chemistry technologies for MSMD production as well as its advantages in comparison with a wet chemical etching, problems arising and possible ways of their elimination are presented. |
| format |
Article |
| author |
Pugatch, V.M. Perevertaylo, V.L. Fedorovich, O.A. Borisenko, A.G. Kostin, E.G. Kruglenko, M.P. Polozov, B.P. Tarasenko, L.I. |
| author_facet |
Pugatch, V.M. Perevertaylo, V.L. Fedorovich, O.A. Borisenko, A.G. Kostin, E.G. Kruglenko, M.P. Polozov, B.P. Tarasenko, L.I. |
| author_sort |
Pugatch, V.M. |
| title |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| title_short |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| title_full |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| title_fullStr |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| title_full_unstemmed |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| title_sort |
plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2007 |
| topic_facet |
Low temperature plasma and plasma technologies |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/110503 |
| citation_txt |
Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation / V.M. Pugatch, V.L. Perevertaylo, O.A. Fedorovich, A.G. Borisenko, E.G. Kostin, M.P. Kruglenko, B.P. Polozov, L.I. Tarasenko // Вопросы атомной науки и техники. — 2007. — № 1. — С. 173-175. — Бібліогр.: 4 назв. — англ. |
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Вопросы атомной науки и техники |
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Problems of Atomic Science and Technology. 2007, 1. Series: Plasma Physics (13), p. 173-175 173
PLASMA TECHNOLOGIES FOR MANUFACTURING OF MICRO-STRIP
METAL DETECTORS OF IONIZING RADIATION
V.M. Pugatch1, V.L. Perevertaylo2, O.A. Fedorovich1, A.G. Borisenko1, E.G. Kostin1,
M.P. Kruglenko1, B.P. Polozov1, L.I.Tarasenko2
1Institute for Nuclear Research of NASU, 47, Pr. Nauki, 03680 Kiev, Ukraine,
e-mail: boris@kinr.kiev.ua;
2 Institute of Microdevices of NASU, Severno-Siretskaya Str. 3, 04136 Kiev, Ukraine,
e-mail: detector@carrier. iev.ua
The manufacturing of elements of micro-strip metal detectors (MSMD) for ionizing radiation applying plasma-
chemistry technologies for etching of multilayer structures is described in details. Results obtained by using plasma-
chemistry technologies for MSMD production as well as its advantages in comparison with a wet chemical etching,
problems arising and possible ways of their elimination are presented.
PACS: 52.77.Bn, 81.65.Cf, 85.40.-e, 85.40.Hp
Now, for carrying out research with beams of the
charged particles or synchrotron radiation micro-strip
metal detectors (MSMD) are getting applied [1]. For their
production silicon substrates are mainly used as far as
microelectronic technologies of silicon processing are
well developed currently.
The important MSMD features determining
complexity of their manufacturing are micrometer sizes of
elements, high accuracy of elements as well as of their
relative positioning. Basic elements of MSMD are thin
metal films (1 m thick), from which it is necessary to
generate narrow (width up to 35 m and 5-15 mm long)
strips with a pitch of few tens m on the area up to one
hundred mm2 (Fig. 1).
Fig. 1. The micro-strip metal detector
The silicon wafer KDB-100 (thickness 400-480 m,
diameter 100 mm) was used as a substrate. For creation of
insulating layer silicon substrate was oxidized in the
environment of oxygen from both sides at temperature
varying from 800 ° up to 1300° to obtain optimum
thickness of SiO2 layer ~ 0,1-0,2 m. Thicker SiO2 layer
(about 1 m) creates extremely tense film which breaks
metal strips when a back side of a substrate is etched. On
that layer of isolation (SiO2) a layer of silicon nitride
(Si3N4) 0,1-0,2 m thick was disposed.
Both sides of a subtstrate were covered by a thin layer of
the titanium (0,05-0,1 m) for better adhesion, and a layer
of nickel (thickness ~0,5-1,0 m) was superimposed
afterwards. In some cases, a layer of silver (~0,5 m
thick) was added from the front side. A silicon substrate
prepared in this way was covered by a photoresistive
layers from both sides. By means of a photolithography
the required geometry for strips as well as for contact
lines between them and pad was provided. Chemical
etching of silver, nickel and titanium was processed to
obtain the figure set by a lithography (providing exact
overlapping of figures from both side). The Si3N4 layer
serves here in the same manner as in the case of a
passivation of microcircuits: to protect metal films of the
defined figure. Metal films width after etching is in the
range of 10 - 35 m (depending upon the request).
After that cycle of operations a silicon substrate was
cut on few plates, everyone with one detector. Now it was
necessary to make metal strips in a working zone of the
detector free from a silicon substrate and layers SiO2 and
Si3N4 under them.
This could be realized by using either plasma-
chemistry or chemical etching or their combination. As
numerous studies have shown, to etch silicon from the
rare side without damaging thin metal films was not
possible by none of the above mentioned processes. Most
of all, this happens due to the fact that thermally oxidized
silicon SiO2 is mechanically tense and at etching up to
low thickness of silicon it starts crack and results in
damage of deposited metal films.
Besides that the silicon substrate, as a rule, is heated
up to 300° at the procedure of covering it by metal
films, and then at the cooling phase due to different
factors of linear expansion of silicon, nickel, silver and
titanium , there is a superficial tension also in metal films.
The slightest roughness in a width of a film results in its
break. Therefore one of the problem arising at
manufacturing strips of film detectors is a development of
a technology to superimpose non-tensed films of nickel
on silicon with the oxidized surface, with high enough
adhesion to surface of SiO2 or Si3N4. An aluminium films
frequently used in microelectronics for manufacturing of
micro-strip detectors appeared to be unsuitable due to
small mechanical durability (the strength limit for
aluminium in 7-9 times less than that for nickel).
At chemical etching the direction of axes of a silicon
crystal is important, while at plasmachemistry etching
such impact is not essential, that, undoubtedly, is in this
mailto:boris@kinr.kiev.ua
mailto:detector@carrier.�iev.ua
174
case an advantage. But there are other, specific problems
related, for example, to the energy of ions in
plasmachemical reactor (PCR). As it has been shown [2],
at ions energy higher than 250 eV the nickel film starts to
be sprayed intensively, and for successful etching of a
silicon substrate without damaging metal films the energy
of ions should be much lower.
The PCR with adjustable energy of ions [3] has been
developed. The energy of chemically active ions in this
reactor is adjusted by means of controlled magnetic fields
in the range of 20 - 700 eV (Fig. 2).
Fig. 2. The scheme of PCR
Use in PCR of the HF-fields crossed with magnetic
fields, allows to generate plasma with chemically active
ions with high concentration, that, in turn, enables to
receive high enough speeds of etching of silicon: from
0,7 m/min (a pressure of a gas in PCR 7 10-3 mm Hg,
discharge current 6 and energy of ions ~40 eV) up to
2,5 m/min (a pressure of gas ~10-1 mm Hg, discharge
current 10 A, energy of ions ~80 eV).
In our case a plasma was excited by means of the HF-
generator operated at the power of 4 kW that allowed to
receive discharge currents up to 16 A. Yet, increasing of
etching speed appeared to be inexpedient since the big
thermal loadings on a substrate resulted in a separation of
metal strips from silicon substrates (Fig. 3).
Fig. 3. Separation of metal strips
from a silicon substrate
The SF6 gas and its mixture with oxygen were used as
operating reagents in PCR. At the beginning of studies we
have tried to remove a silicon substrate from the back
side, only. Unfortunately, there were only 2-3 (out of 32)
strips survived, while others were broken, apparently, due
to the tension in SiO2 and nickel layers.
For elimination of a tension of a continuous film
under silicon a number of experiments has been carried
out to etch a SiO2 layer in gaps between strips of nickel
from a front side. For that purpose etching was carried out
during 15 minutes in plasma SF6 at so-called «soft
mode»: at pressure (7-8) 10-3 mm Hg, a current in the
discharge 6 and energy of ions 80 eV. After etching of
the SiO2 layer in the SF6 plasma an oxygen was added in
quantity of ~10 % from the general pressure and the
energy of ions was reduced down to 40 eV. An addition
of oxygen in working gas of plasma allowed to increase a
speed of etching of silicon, and on the other hand to
receive practically vertical walls of flutes [4].
Low energy of ions and small disharge currents
allowed to etch flutes with a depth of 20-80 m at the
etching rate of a silicon of 0,3-0,7 m/min .without
damaging nickel or nickel-silver films. A part of the
detector which should not be etched was covered by a thin
foil. The width of an etched fragment at the front side was
in the range 5-15 mm. After that an etching of the back
side of a silicon substrate was processed.
The width of etched window at the back side was
~1 mm higher, than at the front one. A special attention
was paid to providing perfect overlapping of windows of
etching at both sides. Up to a thickness of ~50-100 m the
etching of silicon substrate was processed with a speed of
1,6-2,5 m/min, in «a rigid mode». After that to reduce
thermal loading and to preserve integrity of nickel strips
etching was made in a soft mode. The depth of etching
was monitored at the sample made out of the same silicon
wafer.
In some experiments at the thickness of nickel of
~0,3 m and strip width of ~10 m it was possible to
obtain all strips (32 in this case) undamaged. Yet, after a
week of storage in the tight container due to the tension
remained in the structure only 3-5 strips were left
unbroken. The length of strips was in the range of ~5-
15 mm. This result indicated a non-sufficient mechanical
durability of strips. Therefore a thickness of nickel film
has been increased up to ~1 m, and a width of strips up
to 35 m. With those sizes it is possible to get the detector
with all strips (up to 8 mm long) surviving during long
term of conservation and operation. Among problems
which require further studies are: a reduction of a
superficial tension of nickel films, an improvement of a
photolithography and chemical etching of nickel layer (or
nickel with a silver covering).
REFERENCES
1. V. Pugatch, V. Aushev, O. Fedorovitch et al. Micro-
strip Metal Foil Detectors for the beam profile
monitoring // Proceedings DIPAC 2005. Lyon, France,
2005, p. 18-20.
2. A. Borisenko, B. Polozov, O. Fedorovitch et al.
Plasmachemical etching of epitaxial nitride gallium
structures // Technologija i konstruirovanie v elektronnoi
apparature. 2005, 6 (60), p. 42-46 (in Russian).
3. V. Konoval, V. Ustalov, O. Fedorovitch.
Plasmachemical reactor with the closed drift of electrons
for production of elements with the submicron sizes //
175
Proceedings of 6th International Crimean Conference
“Microwave and Telecommunication Technology”
(CriMiCo’1996). Sevastopol, Crimea, Ukraine. 1996, p.
285-287.
4. A. Popov, V. Ustalov, O. Fedorovitch. About influence
of oxygen on anisotropy of the deep plasmachemical
etchings of silicon in the plasmachemical reactor with the
closed drift of electrons // Abstracts of the 7th Conference
“Thin films in production semi-conductor devices and
integrated circuits”. Moscow, 1990, p. 118.
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