Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions
We have studied InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions irradiation by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation is shown to be leading to macro...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Лабораторія ядерних реакцій Росії
2007
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| Schriftenreihe: | Вопросы атомной науки и техники |
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| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/110598 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions / A. Didyk, F. Komarov, L. Vlasukova, V. Yuvchenko, Y. Bogatyrev, F. Korshunov, E. Gracheva // Вопросы атомной науки и техники. — 2007. — № 6. — С. 9-12. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We have studied InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions irradiation by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation is shown to be leading to macrodefect formation in the form of cracks and breaks at the depths near the ion end-of-range and on the crystal surface. A possible explanation of the observed effects is proposed. |
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