Ion sources optimization for high energy ion implantation by computer simulation
Results of the computer simulation for ion sources optimization used for ion implantations have been done. The highly stripped ion source has been designed to provide high current beams of multiply charged P and B ions for high energy ion implantation. However, the total current transport efficiency...
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| Datum: | 2008 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2008
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| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/110769 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Ion sources optimization for high energy ion implantation by computer simulation / I.V. Litovko, V.I. Gushenets // Вопросы атомной науки и техники. — 2008. — № 6. — С. 138-140. — Бібліогр.: 3 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Results of the computer simulation for ion sources optimization used for ion implantations have been done. The highly stripped ion source has been designed to provide high current beams of multiply charged P and B ions for high energy ion implantation. However, the total current transport efficiency was about 30%. The modified computer code Kobra has been used to simulate processes of ion extraction by dc-acceleration systems as well as beam transport and thus to determine main reasons for ion beam losses. The calculations indicated that the losses of extracted ion beam mainly occur in the transport channel and magnetic separator. The computer modeling allows find optimal geometry for ion-optical system. Several ion-optical systems were designed and also changed the design of the initial section of the beam transport channel. Furthermore, the simulation for original way of compensating the parasitic beam deflection has been executed. Results of experiments with the modified geometry are supported simulation results. With the optimization of geometries of the ion-optical system and experimental setup, the maximum current transport for Boron ions has been attained. It should be noted that the maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%. |
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