Ion sources optimization for high energy ion implantation by computer simulation
Results of the computer simulation for ion sources optimization used for ion implantations have been done. The highly stripped ion source has been designed to provide high current beams of multiply charged P and B ions for high energy ion implantation. However, the total current transport efficiency...
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| Date: | 2008 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2008
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/110769 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Ion sources optimization for high energy ion implantation by computer simulation / I.V. Litovko, V.I. Gushenets // Вопросы атомной науки и техники. — 2008. — № 6. — С. 138-140. — Бібліогр.: 3 назв. — англ. |