Optical processes in silicon and microelectronic structures based thereon upon interaction with high-energy radiation
Results of technical studies are presented on formation of light fluxes in silicon and integral structures based thevlon. Effects of these light fluxes upon electric parameters of planar triode structures of integral circuits are considered. It has been shown that under irradiation by high-energy pa...
Gespeichert in:
| Datum: | 2003 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2003
|
| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/110925 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical processes in silicon and microelectronic structures based thereon upon interaction with high-energy radiation / V.G. Volkov, V.D. Ryzhikov, A.K. Gnap, N.I. Kovalenko, V.V. Chernikov, E.F. Khramov // Вопросы атомной науки и техники. — 2003. — № 3. — С. 154-157. — Бібліогр.: 3 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Results of technical studies are presented on formation of light fluxes in silicon and integral structures based thevlon. Effects of these light fluxes upon electric parameters of planar triode structures of integral circuits are considered. It has been shown that under irradiation by high-energy particles consumed and leakage currents of integral circuit are increased. Ways to decrease these effects are proposed. |
|---|