First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal
Electronic structure, DOS effective mass, conductivity effective mass, reduced effective mass are calculated for a TlInS₂ crystal from first principles within the framework of the density functional theory. The electronic structure of TlInS₂ is investigated by the Quantum Wise and Quantum Espresso s...
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Інститут металофізики ім. Г.В. Курдюмова НАН України
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irk-123456789-1126052017-01-24T03:02:31Z First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal Ismayilova, N.A. Orudzhev, H.S. Электронные структура и свойства Electronic structure, DOS effective mass, conductivity effective mass, reduced effective mass are calculated for a TlInS₂ crystal from first principles within the framework of the density functional theory. The electronic structure of TlInS₂ is investigated by the Quantum Wise and Quantum Espresso software program packages within the LDA and SGGA corrections, respectively. The band structures calculated with use of the FHI exchange-correlation and relativistic pseudopotentials show that both the valence band maximum and the conduction band minimum located at the Γ point of the Brillouin zone. The top of the valence band and the bottom of the conduction band originate generally from 6s-states of Tl atoms and 5s-states of In atoms. Influence of the spin—orbit interaction on the electronic structure is investigated. As found, inclusion of the spin—orbit interaction is not essential for the energy states near the gap and removes the band degeneracy along the T—Z symmetry line, but does not remove the degeneracy at the T, Z, and Γ, Y points. The maximum value of the spin—orbit splitting is ≅ 0.3 eV. The effective masses along [001], [010], and [100] directions are calculated taking into account non-parabolicity of the bands. In this paper, DOS effective mass, conductivity effective mass, and reduced effective mass are calculated theoretically for the first time. Для кристалу TlInS₂ з перших принципів в рамках теорії функціоналу густини було розраховано: електронну структуру, DOS-ефективну масу, ефективну масу провідности, наведену ефективну масу. Електронну структуру кристалу було вивчено з використанням пакетів програм Quantum Wise та Quantum Espresso, відповідно, в LDA- та SGGA-наближеннях. Зонні структури, розраховані з використанням обмінно-кореляційного потенціялу FHI та релятивістського псевдопотенціялу, показують, що стеля валентної зони і дно зони провідности розташовані в центрі Бріллюенової зони. Стеля валентної зони і дно зони провідности в основному походять з 6s-станів атомів Tl та 5s-станів атомів In. Також досліджувався вплив спін-орбітальної взаємодії на енергетичний спектер. Було встановлено, що врахування спін-орбітальної взаємодії не є істотним для енергетичних станів поблизу забороненої зони, знімає виродження зон по лінії симетрії T—Z, але не знімає виродження в самих точках T, Z, а також Γ, Y. Максимальне спін-орбітальне розщеплення зон становить ≅ 0,3 еВ. З огляду на непараболічність зон було розраховано ефективні маси в напрямках [001], [010], [100]. У цій роботі було вперше теоретично розраховано DOS-ефективну масу, ефективну масу провідности, наведену ефективну масу, що досі не зустрічалися в літературі. Для кристалла TlInS₂ из первых принципов в рамках теории функционала плотности были рассчитаны: электронная структура, DOS-эффективная масса, эффективная масса проводимости, приведённая эффективная масса. Электронная структура кристалла была изучена с использованием пакетов программ Quantum Wise и Quantum Espresso, соответственно, в LDA- и SGGA-приближениях. Зонные структуры, рассчитанные с использованием обменно-корреляционного потенциала FHI и релятивистского псевдопотенциала, показывают, что потолок валентной зоны и дно зоны проводимости расположены в центре зоны Бриллюэна. Потолок валентной зоны и дно зоны проводимости в основном происходят из 6s-состояний атомов Tl и 5s-состояний атомов In. Также исследовалось влияние спин-орбитального взаимодействия на энергетический спектр. Было установлено, что учёт спин-орбитального взаимодействия не существен для энергетических состояний вблизи запрещённой зоны, снимает вырождения зон по линии симметрии T—Z, но не снимает вырождения в самих точках T, Z, а также Γ, Y. Максимальное спин-орбитальное расщепление зон составляет ≅ 0,3 эВ. С учётом непараболичности зон были рассчитаны эффективные массы в направлениях [001], [010], [100]. В этой работе впервые теоретически рассчитаны DOS-эффективная масса, эффективная масса проводимости, приведённая эффективная масса, которые до сих пор не встречались в литературе. 2016 Article First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal / N. A. Ismayilova and H. S. Orudzhev // Металлофизика и новейшие технологии. — 2016. — Т. 38, № 8. — С. 1019-1026. — Бібліогр.: 12 назв. — англ. 1024-1809 DOI: 10.15407/mfint.38.08.1019 PACS: 71.15Dx, 71.15.Mb, 71.15.Rf, 71.18.+y, 71.20.Nr, 71.45.Gm, 71.70.Ej http://dspace.nbuv.gov.ua/handle/123456789/112605 en Металлофизика и новейшие технологии Інститут металофізики ім. Г.В. Курдюмова НАН України |
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Электронные структура и свойства Электронные структура и свойства |
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Электронные структура и свойства Электронные структура и свойства Ismayilova, N.A. Orudzhev, H.S. First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal Металлофизика и новейшие технологии |
description |
Electronic structure, DOS effective mass, conductivity effective mass, reduced effective mass are calculated for a TlInS₂ crystal from first principles within the framework of the density functional theory. The electronic structure of TlInS₂ is investigated by the Quantum Wise and Quantum Espresso software program packages within the LDA and SGGA corrections, respectively. The band structures calculated with use of the FHI exchange-correlation and relativistic pseudopotentials show that both the valence band maximum and the conduction band minimum located at the Γ point of the Brillouin zone. The top of the valence band and the bottom of the conduction band originate generally from 6s-states of Tl atoms and 5s-states of In atoms. Influence of the spin—orbit interaction on the electronic structure is investigated. As found, inclusion of the spin—orbit interaction is not essential for the energy states near the gap and removes the band degeneracy along the T—Z symmetry line, but does not remove the degeneracy at the T, Z, and Γ, Y points. The maximum value of the spin—orbit splitting is ≅ 0.3 eV. The effective masses along [001], [010], and [100] directions are calculated taking into account non-parabolicity of the bands. In this paper, DOS effective mass, conductivity effective mass, and reduced effective mass are calculated theoretically for the first time. |
format |
Article |
author |
Ismayilova, N.A. Orudzhev, H.S. |
author_facet |
Ismayilova, N.A. Orudzhev, H.S. |
author_sort |
Ismayilova, N.A. |
title |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal |
title_short |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal |
title_full |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal |
title_fullStr |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal |
title_full_unstemmed |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal |
title_sort |
first-principles calculation of electronic structure and effective mass of a tlins₂ crystal |
publisher |
Інститут металофізики ім. Г.В. Курдюмова НАН України |
publishDate |
2016 |
topic_facet |
Электронные структура и свойства |
url |
http://dspace.nbuv.gov.ua/handle/123456789/112605 |
citation_txt |
First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS₂ Crystal / N. A. Ismayilova and H. S. Orudzhev // Металлофизика и новейшие технологии. — 2016. — Т. 38, № 8. — С. 1019-1026. — Бібліогр.: 12 назв. — англ. |
series |
Металлофизика и новейшие технологии |
work_keys_str_mv |
AT ismayilovana firstprinciplescalculationofelectronicstructureandeffectivemassofatlins2crystal AT orudzhevhs firstprinciplescalculationofelectronicstructureandeffectivemassofatlins2crystal |
first_indexed |
2025-07-08T04:16:45Z |
last_indexed |
2025-07-08T04:16:45Z |
_version_ |
1837050842579992576 |
fulltext |
1019
PACS numbers:71.15Dx, 71.15.Mb,71.15.Rf,71.18.+y,71.20.Nr,71.45.Gm, 71.70.Ej
First-Principles Calculation of Electronic Structure
and Effective Mass of a TlInS2 Crystal
N. A. Ismayilova*
and H. S. Orudzhev*,**
*Institute of Physics, A.N.A.S.,
115 G. Javid Ave.,
AZ1073 Baku, Azerbaijan
**Azerbaijan Technical University,
25 G. Javid Ave.,
AZ1073 Baku, Azerbaijan
Electronic structure, DOS effective mass, conductivity effective mass, re-
duced effective mass are calculated for a TlInS2 crystal from first principles
within the framework of the density functional theory. The electronic struc-
ture of TlInS2 is investigated by the Quantum Wise and Quantum Espresso
software program packages within the LDA and SGGA corrections, respec-
tively. The band structures calculated with use of the FHI exchange-
correlation and relativistic pseudopotentials show that both the valence band
maximum and the conduction band minimum located at the point of the
Brillouin zone. The top of the valence band and the bottom of the conduction
band originate generally from 6s-states of Tl atoms and 5s-states of In atoms.
Influence of the spin—orbit interaction on the electronic structure is investi-
gated. As found, inclusion of the spin—orbit interaction is not essential for
the energy states near the gap and removes the band degeneracy along the —
Z symmetry line, but does not remove the degeneracy at the , Z, and , Y
points. The maximum value of the spin—orbit splitting is 0.3 eV. The effec-
tive masses along [001], [010], and [100] directions are calculated taking into
account non-parabolicity of the bands. In this paper, DOS effective mass,
conductivity effective mass, and reduced effective mass are calculated theo-
retically for the first time.
Key words: LDA, GGA, spin—orbit interaction, DOS effective mass, conduc-
tivity effective mass.
Corresponding author: Narmin Arifkyzy Ismayilova
E-mail: ismayilova_narmin_84@mail.ru
Please cite this article as: N. A. Ismayilova and H. S. Orudzhev, First-Principles
Calculation of Electronic Structure and Effective Mass of a TlInS2 Crystal, Metallofiz.
Noveishie Tekhnol., 38, No. 8: 1019—1026 (2016), DOI: 10.15407/mfint.38.08.1019.
Металлофиз. новейшие технол. / Metallofiz. Noveishie Tekhnol.
2016, т. 38, № 8, сс. 1019—1026 / DOI: 10.15407/mfint.38.08.1019
Оттиски доступны непосредственно от издателя
Фотокопирование разрешено только
в соответствии с лицензией
2016 ИМФ (Институт металлофизики
им. Г. В. Курдюмова НАН Украины)
Напечатано в Украине.
1020 N. A. ISMAYILOVA and H. S. ORUDZHEV
Для кристалу TlInS2 з перших принципів в рамках теорії функціоналу
густини було розраховано: електронну структуру, DOS-ефективну масу,
ефективну масу провідности, наведену ефективну масу. Електронну стру-
ктуру кристалу було вивчено з використанням пакетів програм Quantum
Wise та Quantum Espresso, відповідно, в LDA- та SGGA-наближеннях.
Зонні структури, розраховані з використанням обмінно-кореляційного
потенціялу FHI та релятивістського псевдопотенціялу, показують, що
стеля валентної зони і дно зони провідности розташовані в центрі Бріллю-
енової зони. Стеля валентної зони і дно зони провідности в основному по-
ходять з 6s-станів атомів Tl та 5s-станів атомів In. Також досліджувався
вплив спін-орбітальної взаємодії на енергетичний спектер. Було встанов-
лено, що врахування спін-орбітальної взаємодії не є істотним для енерге-
тичних станів поблизу забороненої зони, знімає виродження зон по лінії
симетрії —Z, але не знімає виродження в самих точках , Z, а також , Y.
Максимальне спін-орбітальне розщеплення зон становить 0,3 еВ. З
огляду на непараболічність зон було розраховано ефективні маси в на-
прямках [001], [010], [100]. У цій роботі було вперше теоретично розрахо-
вано DOS-ефективну масу, ефективну масу провідности, наведену ефек-
тивну масу, що досі не зустрічалися в літературі.
Ключові слова: LDA, GGA, спін-орбітальна взаємодія, DOS-ефективна
маса, ефективна маса провідности.
Для кристалла TlInS2 из первых принципов в рамках теории функциона-
ла плотности были рассчитаны: электронная структура, DOS-эффектив-
ная масса, эффективная масса проводимости, приведённая эффективная
масса. Электронная структура кристалла была изучена с использованием
пакетов программ Quantum Wise и Quantum Espresso, соответственно, в
LDA- и SGGA-приближениях. Зонные структуры, рассчитанные с исполь-
зованием обменно-корреляционного потенциала FHI и релятивистского
псевдопотенциала, показывают, что потолок валентной зоны и дно зоны
проводимости расположены в центре зоны Бриллюэна. Потолок валент-
ной зоны и дно зоны проводимости в основном происходят из 6s-
состояний атомов Tl и 5s-состояний атомов In. Также исследовалось вли-
яние спин-орбитального взаимодействия на энергетический спектр. Было
установлено, что учёт спин-орбитального взаимодействия не существен
для энергетических состояний вблизи запрещённой зоны, снимает вы-
рождения зон по линии симметрии —Z, но не снимает вырождения в са-
мих точках , Z, а также , Y. Максимальное спин-орбитальное расщеп-
ление зон составляет 0,3 эВ. С учётом непараболичности зон были рас-
считаны эффективные массы в направлениях [001], [010], [100]. В этой
работе впервые теоретически рассчитаны DOS-эффективная масса, эф-
фективная масса проводимости, приведённая эффективная масса, кото-
рые до сих пор не встречались в литературе.
Ключевые слова: LDA, GGA, спин орбитальное взаимодействие, DOS-
эффективная масса, эффективная масса проводимости.
(Received May 23, 2016; in final version, August 9, 2016)
CALCULATION OF ELECTRONIC STRUCTURE AND EFFECTIVE MASS OF TlInS2 1021
1. INTRODUCTION
The III—III—VI2 type crystals exhibit quasi-low-dimensionality in the
form of layered and chain structures and has become increasingly at-
tractive due to their interesting structural properties and potential
optoelectronic applications [1] (see also references therein). As well as
layered TlMeX2 (where Me In or Ga and X S or Se) crystals, TlInS2
has C2/c space group symmetry at room temperature [2]. The funda-
mental structural unit of the layer is the In4S6 adamantane-like units
linked together by bridging S atoms. The Tl atoms are in trigonal pris-
matic voids resulting from the combination of the In4S6 polyhedra into
a layer [3]. Absorption spectra of thin films of the TlInS2 crystals are
used to study the energy gap and the interband transitions in the ener-
gy region of 2—2.4 eV. The direct band gap was determined to be
2.34 eV [4]. Hole, electron, hole—electron pair effective masses of
0.24m0, 0.14m0 and 0.09m0 are obtained from the Hall effect meas-
urements [5]. Obtained from the excitonic and interband transitions’
studies of the TlInS2 crystals, reduced masses are 0.15m0 [6], 0.17m0
[7]. In some studies, we came across some information about effective
mass of the crystal; however, this information is not sufficient and in
this work made a detailed investigation of the hole electron DOS effec-
tive mass, reduced and conductivity effective mass.
2. COMPUTATIONAL METHOD
In this article, we present the results of electronic structure for TlInS2
crystal from the first principles in the framework of the DFT (Density
Functional Theory) [8] by the Quantum Wise and Quantum Espresso
software program packages, within the Local Density Approximation
(LDA) [9] and the Spin Generalized Density Approximation (SGGA)
[10], respectively.
The lattice parameters and the equilibrium atomic positions in a
unit cell were determined by the minimization of the Hellmann—
Feynman forces until forces and stresses were less than 0.0001 eV/Å
and 0.0001 eV/Å3, respectively. The Perdew—Burke—Erenzhorf (PBE)
exchange—correlation functional and Double Zeta Polarized basis sets
were used in our calculations. The wave function was expanded taking
into account plane waves with energies of up to 150 Ry, which provide
a good convergence of the total energy. Lattice parameters of the op-
timized structure in good agreement with experimental result [11] and
differ from them only 1%. The electron configuration of atoms in
HGH pseudopotentials were chosen as (core electron) Tl 14
[Xe]4f
10 2 1
5 6 6d s p , In
10 2 1
[Kr] 4 5 5d s p and S
2 4
[Ne] 3 3s p , and in FHI
pseudopotentials were chosen as Tl
14 10 2 1
[Xe]4 5 6 6f d s p , In 10
[Kr]4d
2 1
5 5s p , S
2 4
[Ne] 3 3 .s p
1022 N. A. ISMAYILOVA and H. S. ORUDZHEV
3. RESULTS AND DISCUSSION
Let us examine the band structures calculated by different methods
separately. The band structure calculated by using FHI pseudopoten-
tial show that the valence band maximum and minimum of the conduc-
tion band located at the point of the Brillouin zone (Fig. 1). There-
fore, TlInS2 is a direct band gap semiconductor as obtained in the spec-
troscopic measurements [4]. The band gap obtained by HGH and FHI
pseudopotentials are 1.43 eV and 1.25 eV, respectively, and are smaller
than experimental one (2—2.3 eV) [4]. It is well known that the LDA
and GGA usually underestimate the band gaps of the Kohn—Sham elec-
tronic band structure. The electronic structure calculated by HGH
pseudopotential has been widely discussed in our work [12].
The spin—orbit splitting has been investigated by using full-
relativistic pseudopotential in Quantum Espresso.
In electronic structure calculated by the SGGA, fundamental ab-
sorption edge of crystal is formed with direct transition. The values of
band gap and lattice parameters are given in Table 1. According to the
calculated structures by the SGGA in Quantum Espresso and Quantum
Wise, the spin—orbit interaction influences along the symmetry line of
—Z (Fig. 2).
Thus, excluding and Z symmetry points, along this line, double
degeneracy of the bands is removed by taking into account the spin—
orbit interaction.
Fig. 1. Electronic structure calculated within the LDA by means of the FHI
pseudopotential.
CALCULATION OF ELECTRONIC STRUCTURE AND EFFECTIVE MASS OF TlInS2 1023
It is not observed degeneracy in the other symmetry points and
symmetry lines. In spite of band gap gets smaller to 0.2 eV, in general,
TABLE 1. Lattice parameters and band gap calculated within the LDA using
the FHI and HGH pseudopotentials and within the SGGA using the full rela-
tivistic pseudopotential.
Quantum wise Quantum espresso Exp. [11]
LDA (FHI, HGH) SGGA (full-relativistic)
a (Å) 10.800 11.0146 10.90
b (Å) 10.845 11.0132 10.90
c (Å) 15.054 15.3488 15.19
() 100.375 100.27 100.55
Eg (eV) 1.25 (FHI),1.43 (HGH) 1.25 2.35
Fig. 2. Electronic structure calculated by Quantum Espresso program exclud-
ing the spin—orbit interaction (used pseudopotential is relativistic) (a) and
electron spectrum calculated with taking into account the spin—orbital inter-
action (used pseudopotential is full relativistic) (b).
1024 N. A. ISMAYILOVA and H. S. ORUDZHEV
spin—orbit interaction does not influence seriously on surrounding
state of band gap. The splitting observed in lower parts of conductivity
bands, which are formed from 5s-electron states of In atoms.
It is also calculated DOS effective mass, conductivity effective
mass, reduced effective masses of electrons and holes within the LDA
by the FHI pseudopotential using 111111 k-point sets. Taking into
account non-parabolicity of maximum of the valence band and mini-
mum of the conduction band at the point, effective mass is calculated
by
2 2
(1 )
2
h k
E E
m . Here, the quantity of parabolic characterize is .
In our software calculations, k-points were expressed with basis trans-
lations of the reciprocal lattice, and directions were taken as OX–
1 2
g g , OY–
1 2
,g g and OZ–
3g .
Note that direction 1 2
g g in fact is different from direction OX by
10. Nevertheless, this difference in direction does not affect the re-
sults, and the relative error is not more than 2%. Here, basis transla-
tions of the reciprocal lattice are as follow:
1
1 1 1
2 , , tan ,
2a b a
g
2
1 1 1
2 , , tan ,
2a b a
g
3
1
2 0,0, .
cos /2c
g
Calculated effective masses for each of the three directions of elec-
tron (hole) were given in Table 2. Calculated value for electron (hole)
effective mass, 0.14me (0.24me), in the 3
g direction is in a good agree-
ment with experimental effective mass for electron (hole) 0.14me
(0.19me) in this direction [5].
TABLE 2. The electron and hole effective masses in directions OZ, OY, OX
calculated within the LDA. All the masses are given in units of free electron
mass.
Directions LDA (FHI) Exp. [3]
*
e
m *
h
m *
e
m *
h
m
3
g OZ 0.14 0.19 0.14 0.24
1 2
g g OY 0.33 0.71
1 2
g g OX 0.28 0.59
CALCULATION OF ELECTRONIC STRUCTURE AND EFFECTIVE MASS OF TlInS2 1025
For calculation DOS effective mass, we used
2 1
* * * *3 3
( )DOS ( ) ( ) y ( ) z,( ) ( ) .e h e h x e h e he hm M m m m (1)
Here, ,( )e hM is number of equivalent valleys for electrons and holes.
The conduction (valence) band minimum (maximum) is located in the
centre of the Brillouin zone. For this reason, numbers of equivalent
values in both cases were equal to unit. Here,
*
,( )e h xm ,
*
,( )e h ym and
*
,( )e h zm
are electron (hole) effective masses in the direction of a coordinate ax-
is. Similarly, for calculation of conductivity effective mass, we used
*
( ) con
* 1 * 1 * 1
,( ) ,( ) ,( )
3
,
( ) ( ) ( )
e h
e h x e h y e h z
m
m m m
(2)
*
con 0.221 ,e em m *
con 0.355 .h em m
Reduced effective mass *
red 0.15 em m (Table 3) was calculated using
values of the three mutually perpendicular directions electron and hole
effective masses. Note that obtained reduced effective mass in [6] and
[7] experimental works was carried out only by the (001) plane. For cal-
culated reduced effective mass in this plane, we have found geometric
mean effective masses of hole and electron, which are calculated paral-
lel to the axis OY and OX. Obtained result, 0.20me, is in a good agree-
ment with experimental results: 0.17me [6] and 0.15me [7].
4. CONCLUSION
Calculated electronic structure by the Quantum Wise and Quantum
Espresso software within the LDA, SGGA in different pseudopotential
show that valence band maximum and conductivity band minimum are
located at the point of the Brillouin zone. Spin—orbit interaction re-
moves double degeneracy along the symmetry —Z line, excluding
symmetry and Z points. Maximum spin—orbit splitting is of 0.3 eV.
Calculated DOS effective masses of electron and hole are
*
DOS 0.24e em m and *
DOS 0.41h em m , respectively. Conductivity effec-
tive masses of electron and hole are *
con 0.221e em m and
*
conhm
0.355 em , respectively. Reduced effective mass is *
red 0.15 em m ,
TABLE 3. Calculated electron (hole) DOS, conductivity and reduced effective
masses. All the masses are given in units of free electron mass.
*
DOSe
m *
DOSh
m *
cone
m *
conh
m *
red
m *
red
m (111) *
red
m (001)
*
red
m (001)
Exp. [6], [7]
0.24 0.41 0,22 0.35 0.15 0.20 0.17 0.15
1026 N. A. ISMAYILOVA and H. S. ORUDZHEV
and in-plane (001) reduced effective mass is *
red(001) 0.20 .em m
REFERENCE
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/ENU (Use these settings to create Adobe PDF documents best suited for high-quality prepress printing. Created PDF documents can be opened with Acrobat and Adobe Reader 5.0 and later.)
>>
/Namespace [
(Adobe)
(Common)
(1.0)
]
/OtherNamespaces [
<<
/AsReaderSpreads false
/CropImagesToFrames true
/ErrorControl /WarnAndContinue
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/IncludeNonPrinting false
/IncludeSlug false
/Namespace [
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(InDesign)
(4.0)
]
/OmitPlacedBitmaps false
/OmitPlacedEPS false
/OmitPlacedPDF false
/SimulateOverprint /Legacy
>>
<<
/AddBleedMarks false
/AddColorBars false
/AddCropMarks false
/AddPageInfo false
/AddRegMarks false
/ConvertColors /ConvertToCMYK
/DestinationProfileName ()
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/Downsample16BitImages true
/FlattenerPreset <<
/PresetSelector /MediumResolution
>>
/FormElements false
/GenerateStructure false
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/MultimediaHandling /UseObjectSettings
/Namespace [
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(CreativeSuite)
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]
/PDFXOutputIntentProfileSelector /DocumentCMYK
/PreserveEditing true
/UntaggedCMYKHandling /LeaveUntagged
/UntaggedRGBHandling /UseDocumentProfile
/UseDocumentBleed false
>>
]
>> setdistillerparams
<<
/HWResolution [2400 2400]
/PageSize [612.000 792.000]
>> setpagedevice
|