Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit
Analysis is made for the possibility of redistribution of mobile point defects in a semiconductor after its exposure to the electric field till the stationary conditions in the crystal are reached. Two different ways of applying the voltage are considered: (i) directly to the sample, (ii) to a capac...
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| Datum: | 1998 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114667 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit / N.I. Kashirina, V.V. Kislyuk, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 41-44. — Бібліогр.: 12 назв. — англ. |