Effect of the desorption process on photoluminescence excitation spectra of porous silicon

Effect of the desorption process on photoluminescence excitation spectra of porous silicon

Photoluminescence (PL), photoluminescence excitation (PLE) and FTIR methods were used to study the PL excitation mechanism in porous silicon (PS). Two types of PLE spectra were observed, consisting of two (visible and ultraviolet) and one (only ultraviolet) bands. The intensities of each PLE band de...

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Datum:1998
Hauptverfasser: Torchinskaya, T.V., Korsunskaya, N.E., Khomenkova, L.Yu., Dzhumaev, B.R., Many, A., Goldstein, Y., Savir, E.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/114671
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of the desorption process on photoluminescence excitation spectra of porous silicon / T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, B.R. Dzhumaev, A. Many, Y. Goldstein, E. Savir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 61-65. — Бібліогр.: 4 назв. — англ.

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