Effect of the desorption process on photoluminescence excitation spectra of porous silicon

Effect of the desorption process on photoluminescence excitation spectra of porous silicon

Photoluminescence (PL), photoluminescence excitation (PLE) and FTIR methods were used to study the PL excitation mechanism in porous silicon (PS). Two types of PLE spectra were observed, consisting of two (visible and ultraviolet) and one (only ultraviolet) bands. The intensities of each PLE band de...

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Bibliographic Details
Date:1998
Main Authors: Torchinskaya, T.V., Korsunskaya, N.E., Khomenkova, L.Yu., Dzhumaev, B.R., Many, A., Goldstein, Y., Savir, E.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/114671
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of the desorption process on photoluminescence excitation spectra of porous silicon / T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, B.R. Dzhumaev, A. Many, Y. Goldstein, E. Savir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 61-65. — Бібліогр.: 4 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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