Effect of the desorption process on photoluminescence excitation spectra of porous silicon
Photoluminescence (PL), photoluminescence excitation (PLE) and FTIR methods were used to study the PL excitation mechanism in porous silicon (PS). Two types of PLE spectra were observed, consisting of two (visible and ultraviolet) and one (only ultraviolet) bands. The intensities of each PLE band de...
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| Datum: | 1998 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114671 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of the desorption process on photoluminescence excitation spectra of porous silicon / T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, B.R. Dzhumaev, A. Many, Y. Goldstein, E. Savir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 61-65. — Бібліогр.: 4 назв. — англ. |