Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors
In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established with using of different combinations of etchants for the accele...
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| Datum: | 2016 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2016
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| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/115345 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors / G.P. Gaidar, S.V. Berdnichenko, V.G. Vorobyov, V.I. Kochkin, V.F. Lastovetskiy, P.G. Litovchenko // Вопросы атомной науки и техники. — 2016. — № 2. — С. 17-24. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier
detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established
with using of different combinations of etchants for the accelerated creation of surface-barrier structures with stable
parameters, the slow regimes of etching were developed for making the detectors of plane-parallel geometry. On the
basis of experimental studies concerning the improvement of the formation processes of qualitative surface-barrier
structures, the fabrication technique of the silicon spectrometric detectors was optimized; the prototypes were
manufactured and their characteristics were identified. |
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