Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions

We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2...

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Datum:2012
1. Verfasser: Latyshev, Yu.I.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2012
Schriftenreihe:Физика низких температур
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/117126
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing 1/L follows the analog of Josephson equation vF/L = 2eV/h.