Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions

We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2...

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Datum:2012
1. Verfasser: Latyshev, Yu.I.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2012
Schriftenreihe:Физика низких температур
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/117126
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Zitieren:Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ.

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spelling irk-123456789-1171262017-05-21T03:02:32Z Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions Latyshev, Yu.I. Квантовые когерентные эффекты в сверхпроводниках и новые материалы We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing 1/L follows the analog of Josephson equation vF/L = 2eV/h. 2012 Article Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ. PACS: 75.50.+r, 71.45.Lr, 73.40.Gk 0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/117126 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Квантовые когерентные эффекты в сверхпроводниках и новые материалы
Квантовые когерентные эффекты в сверхпроводниках и новые материалы
spellingShingle Квантовые когерентные эффекты в сверхпроводниках и новые материалы
Квантовые когерентные эффекты в сверхпроводниках и новые материалы
Latyshev, Yu.I.
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
Физика низких температур
description We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing 1/L follows the analog of Josephson equation vF/L = 2eV/h.
format Article
author Latyshev, Yu.I.
author_facet Latyshev, Yu.I.
author_sort Latyshev, Yu.I.
title Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
title_short Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
title_full Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
title_fullStr Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
title_full_unstemmed Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions
title_sort comparison of phase slippage processes in josephson junctions and in charge density wave stacked junctions
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2012
topic_facet Квантовые когерентные эффекты в сверхпроводниках и новые материалы
url http://dspace.nbuv.gov.ua/handle/123456789/117126
citation_txt Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ.
series Физика низких температур
work_keys_str_mv AT latyshevyui comparisonofphaseslippageprocessesinjosephsonjunctionsandinchargedensitywavestackedjunctions
first_indexed 2025-07-08T11:41:31Z
last_indexed 2025-07-08T11:41:31Z
_version_ 1837078825255567360