Local heating method for growth of aligned carbon nanotubes at low ambient temperature
We use a highly localised resistive heating technique to grow vertically aligned multiwalled nanotube films and aligned single-walled nanotubes on substrates with an average temperature of less than 100°C. The temperature at the catalyst can easily be as high as 1000 °C but an extremely high tempe...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
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| Schriftenreihe: | Физика низких температур |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117563 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Local heating method for growth of aligned carbon nanotubes at low ambient temperature / S. Dittmer, S. Mudgal, O.A. Nerushev, E.E.B. Campbell // Физика низких температур. — 2008. — Т. 34, № 10. — С. 1058-1062. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We use a highly localised resistive heating technique to grow vertically aligned multiwalled nanotube
films and aligned single-walled nanotubes on substrates with an average temperature of less than 100°C. The
temperature at the catalyst can easily be as high as 1000 °C but an extremely high temperature gradient
ensures that the surrounding chip is held at much lower temperatures, even as close as 1μm away from the
local heater. We demonstrate the influence of temperature on the height of multi-walled nanotube films,
illustrate the feasibility of sequential growth of single-walled nanotubes by switching between local heaters
and also show that nanotubes can be grown over temperature sensitive materials such as resist polymer. |
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