Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements
Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, and Ge₉.₅As₂₈.₆S₆₁.₉, respectively, were studied using the Raman spectr...
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| Datum: | 2013 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117599 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 27-36. — Бібліогр.: 63 назв. — англ. |