The role of multicomponent surface diffusion in growth and doping of silicon nanowires
The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly differen...
Gespeichert in:
| Datum: | 2007 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117659 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The role of multicomponent surface diffusion in growth and doping of silicon nanowires / A. Efremov, A. Klimovskaya, D. Hourlier // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 18-26. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events (adsorption, desorption, and multicomponent atomic transport with strongly different local mobility, etc.) that take place on the same surface sites and proceed on isolated nano-scaled part of the surface
belonging to different individual catalyst particle. In this work, the competition for
unoccupied sites during atomic transport under growth doping and percolation-related
phenomena on confined parts of surface was treated by the Monte-Carlo simulations.
Atomistic simulations were compared with numerical kinetic modeling. Arising nonlinear
effects that finally lead to specific modes of the nanoobject growth, shaping, and
doping were analyzed. By combining different kinds of simulations and experimental
results, the proposed strategy provides a better control at atomic scale of nanowire
growth. Both atomistic and kinetic considerations supplementing each other reveal the
importance of surface transport and the role of surface immobile contaminations in the
nanowire growth. |
|---|