Features of piezoresistance in heavily doped n-silicon crystals
It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along th...
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| Datum: | 2013 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Features of piezoresistance in heavily doped n-silicon crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 80-83. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | It has been shown that in silicon single crystals heavily doped with arsenic the
presence of the temperature gradient at the interface of the liquid and solid phases in the
process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and
perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant
influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K)
during the growth of single crystals. |
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