The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

(As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we...

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Datum:2013
Hauptverfasser: Rubish, V.M., Bih, L., Mykaylo, O.A., Gorina, O.V., Maryan, V.M., Gasinets, S.M., Solomon, A.M., Lazor, P., Kostyukevych, S.O.
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Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/117678
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Zitieren:The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ.

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spelling irk-123456789-1176782017-05-27T03:03:47Z The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system Rubish, V.M. Bih, L. Mykaylo, O.A. Gorina, O.V. Maryan, V.M. Gasinets, S.M. Solomon, A.M. Lazor, P. Kostyukevych, S.O. (As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes. 2013 Article The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.43.Fs, 61.46.Bc, 78.30.Ly http://dspace.nbuv.gov.ua/handle/123456789/117678 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description (As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes.
format Article
author Rubish, V.M.
Bih, L.
Mykaylo, O.A.
Gorina, O.V.
Maryan, V.M.
Gasinets, S.M.
Solomon, A.M.
Lazor, P.
Kostyukevych, S.O.
spellingShingle Rubish, V.M.
Bih, L.
Mykaylo, O.A.
Gorina, O.V.
Maryan, V.M.
Gasinets, S.M.
Solomon, A.M.
Lazor, P.
Kostyukevych, S.O.
The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rubish, V.M.
Bih, L.
Mykaylo, O.A.
Gorina, O.V.
Maryan, V.M.
Gasinets, S.M.
Solomon, A.M.
Lazor, P.
Kostyukevych, S.O.
author_sort Rubish, V.M.
title The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
title_short The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
title_full The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
title_fullStr The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
title_full_unstemmed The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
title_sort influence of obtaining and heat treatment conditions on the structure of as₂s₃-sbsi system
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117678
citation_txt The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-07-01T09:28:50Z
last_indexed 2025-07-01T09:28:50Z
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