Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established usi...
Збережено в:
| Дата: | 2013 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117683 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117683 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1176832017-05-27T03:05:38Z Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established using electron and atomic force microscopies, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemicalmechanical polishing the investigated materials has been made. Concentration regions of polishing solutions have been found for various types of ZnSe surface treatment: to remove the damaged layer, to control the etching rate, to obtain samples of a given thickness. 2013 Article Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/117683 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The process of chemical polishing the undoped and doped ZnSe crystals
surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples
polishing rate on the concentration of H₂O₂ in HBr solution has been investigated.
Surface states after chemical etching have been established using electron and atomic
force microscopies, and it was shown that the surface state is improved after chemical
etching. Etchant selection to develop slow polishing compositions for chemicalmechanical
polishing the investigated materials has been made. Concentration regions of
polishing solutions have been found for various types of ZnSe surface treatment: to
remove the damaged layer, to control the etching rate, to obtain samples of a given
thickness. |
| format |
Article |
| author |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| spellingShingle |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tomashyk, V.M. Kravtsova, A.S. Tomashyk, Z.F. Stratiychuk, I.B. Galkin, S.M. |
| author_sort |
Tomashyk, V.M. |
| title |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_short |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_fullStr |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_full_unstemmed |
Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching |
| title_sort |
optimization of conditions for treatment of znse crystal surfaces by chemical etching |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117683 |
| citation_txt |
Optimization of conditions for treatment of ZnSe crystal surfaces
by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT tomashykvm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT kravtsovaas optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT tomashykzf optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT stratiychukib optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching AT galkinsm optimizationofconditionsfortreatmentofznsecrystalsurfacesbychemicaletching |
| first_indexed |
2025-07-08T12:37:07Z |
| last_indexed |
2025-07-08T12:37:07Z |
| _version_ |
1837082339528671232 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
140
PACS 81.65.Cf
Optimization of conditions for treatment of ZnSe crystal surfaces
by chemical etching
V.М. Tomashyk1, А.S. Kravtsova1, Z.F. Tomashyk1, І.B. Stratiychuk1, S.М. Galkin2
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv; e-mail: graceful_anna@mail.ru
2Institute for Scintillation Materials, National Academy of Sciences of Ukraine,
60, Lenin Ave, Kharkiv
Abstract. The process of chemical polishing the undoped and doped ZnSe crystals
surface with H2O2 – HBr etchants has been studied. The dependence of the samples
polishing rate on the concentration of H2O2 in HBr solution has been investigated.
Surface states after chemical etching have been established using electron and atomic
force microscopies, and it was shown that the surface state is improved after chemical
etching. Etchant selection to develop slow polishing compositions for chemical-
mechanical polishing the investigated materials has been made. Concentration regions of
polishing solutions have been found for various types of ZnSe surface treatment: to
remove the damaged layer, to control the etching rate, to obtain samples of a given
thickness.
Keywords: semiconductor, zinc selenide, etchant, crystal, chemical-mechanical
polishing, chemical-dynamic polishing.
Manuscript received 16.01.13; revised version received 22.02.13; accepted for
publication 19.03.13; published online 25.06.13.
1. Introduction
The traditional technology of modern electronics for
manufacturing elements of devices with semiconductor
II-VI compounds involves the use of abrasive or
chemical treatment methods at all stages of their
production [1]. In this regard, great importance is the
development of defect-free single crystals manufactured
technology, which includes transaction oriented cutting
plates from monocrystalline ingots, the application
workpieces manufacturing of given configuration and
obtaining the required wafer surface geometry using
chemical mechanical (CMP) and chemical dynamic
polishing (CDP) technologies that prevent formation and
transformation of defects [2].
Chemical modification of the II-VI semiconductor
compounds surfaces is often carried out using bromine
containing mixtures [3-8]. To obtain more perfect
polished surface of ZnSe crystals, bromine containing
etching compositions such as Br2 in methanol or
ethanol with different bromine content has been used
[9-15] (Table 1). For chemical etching the ZnSe
crystals with orientation (111) a solution of 0.4 vol.%
Br2/CH3OH at the boiling point can be used [10]. In
[11, 12], zinc selenide semiconductor wafers were
treated with 2 vol.% solution of Br2 in CH3OH at T =
273-283 K. At the treating of ZnSe surfaces with
0.5 vol.% solution of Br2 in CH3OH, formation of
etching pits on the polished plane (111) were observed
[13]. In [14], after the previous mechanical treatment of
ZnSe (111) crystals with the diamond paste of 0.25-μm
graininess, carried out was etching them with the
0.5 vol.% solution of Br2 in CH3OH. The processes of
etching the doped ZnSe samples were carried out in the
solution that contains 10 vol.% Br2 in C2H5OH for
2 min [15].
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
141
Table 1. The etchant compositions for chemical treatment
of ZnSe crystals.
1.
0.4% Br2 in
CH3OH
Using the hot solution
at its boiling point,
the orientation of
crystals (111)
[10]
2.
0.5% Br2 in
CH3OH
The etching pits are
located on a (111) plane
[13]
3.
0.5% Br2 in
CH3OH
The pretreatment was
performed by diamond
paste (0.25 μm),
orientation of crystals
(111)
[14]
4.
2% Br2 : 98%
CH3OH
T = 273-283 K
[9,
11,12]
5.
10% Br2 in
C2H5OH
The process of etching
was carried out for
2 min
[15]
The high toxicity and difficulty of process
conditions, when using the bromine containing etchants,
require searching for a new, less toxic and more
technological etching compositions with low dissolution
rates of semiconductor surfaces. An alternative to
bromine containing etchants is bromine emerging
compositions, including solutions based on Н2О2 – HBr,
which can be used even at 291-298 K. In these mixtures,
free bromine is produced in the process of interaction
between components disappears. It means that all
bromine takes part in the chemical etching.
In this paper, we report peculiarities of the
chemical-mechanical etching of undoped and aluminum
or tellurium doped ZnSe crystals in Н2О2 – HBr –
ethylene glycol (EG) etching compositions and surface
morphology after chemical etching, optimization of
etchant compositions for semiconductors chemical
polishing and technological conditions of CMP to use
them in producing materials for making operation
elements for optical and electronic devices, and selection
of slow zinc selenide polishing compositions for CMP.
2. Experimental
The research was carried out using crystal wafers of
undoped ZnSe(I) (without thermal annealing), ZnSe(II)
(after thermal annealing) and doped ZnSe(Al) and
ZnSe(Te) crystals grown by the Bridgman method.
The surface pretreatment of undoped and doped
ZnSe before chemical polishing process included the
following operations:
– cutting the relevant crystal ingots to wafers;
– mechanical treatment of surface (polishing with
abrasives, mechanical polishing);
– removing the surface damaged layer by CMP;
– surface inter-cleaning after each stage of treatment.
For each of these steps we have developed the
technological modes and recommendations to these
operations.
Cutting the crystal ingots to wafers. According to
our methods, the samples of undoped and doped ZnSe
crystals were cut from grown single crystal ingots in a
special unit by cutting wire with a diamond coating. The
process was performed on stall at the following
technological conditions (the string was moisten with
distilled water in the cutting process): the diameter of the
wire string 300 μm; speed of its motion 0.5 m/s; load on
a crystal 15 g; process duration 10 to 20 min; cutting
width 350 mm, while the rate of crystal cutting was
200 mm/min.
The investigated samples were cut with a 1.2 mm
thickness; the area of the substrate was not less than
25 mm2. The semiconductor cutting was followed by an
intensive mechanical effect on the crystal, and, as the
result, the obtained surface contained irregularities and
damaged layer of different thickness that depends on the
material nature. These irregularities and damaged layer
can be partially removed by mechanical polishing.
According to preliminary assessments, the damaged
layer of ZnSe surface was 50-60 μm as a result of cutting
by the developed method, while after cutting ZnSe with
a diamond wheel, it is much larger and reaches
100…150 μm) [1, 2].
Mechanical polishing the samples. Polishing
ZnSe(I), ZnSe(II), ZnSe(Al), ZnSe(Te) plates after
cutting by our developed method should be performed
using abrasive powder with grain sizes M 10, M 5 and
M 1, or diamond powders ASM 28/20, ASM 10/7,
ASM 5/3, ASM 3/2, ASM 2/1 and ASM 1/0. The
polishing mixture is prepared in the form of abrasive
powders aqueous suspensions with distilled water. The
process should be carried out on a glass grinder,
alternately treating the plate with both sides within 1-
5 min by each abrasive (in order to decrease abrasive
grit) depending on the thickness of the damaged layer
that must be removed. After this, the samples should be
thoroughly washed with warm distilled water using the
addition of a small amount of detergent, then several
times with distilled water and dried in air. The
elimination rate of the surface layer was different
depending on the nature of these materials and abrasive
grit (Table 2). The ZnSe(Al) material elimination rate
was 6 μm/min when we made polishing by abrasive
diamond powders ASM 28/20, and by powder ASM 5/3
amounts to 4 μm/min. For ZnSe(Te) crystals the surface
layer elimination rate with abrasives ASM 28/20 is equal
to 18 μm/min and 2 μm/min with diamond powder
ASM 5/3.
This small surface layer elimination rate of
ZnSe(Al) samples may be related to the fact that these
crystals were thermally annealed in atmosphere of zinc,
and ZnSe (Te) crystals were prepared without thermal
annealing. After mechanical polishing of undoped and
doped ZnSe, the damaged layer thickness was about 10
to 30 μm [1], and the layer can be removed using CMP.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
142
Table 2. The elimination rates of ZnSe crystals surface
layer during mechanical polishing by free abrasives.
The elimination rate of the
surface layer, μm/minSemiconductor
М10 М5
ZnSe (I) 154.5 47
ZnSe (II) 145.5 30
ZnSe(Al) 109 67
ZnSe(Te) 89.5 71
Chemical-mechanical polising. Elimination of the
surface damaged layer should be carried out using the
CMP method. To make the CMP process for ZnSe(I),
ZnSe(II), ZnSe(Al), ZnSe(Te) samples, we developed
polishing solution at a volume ratio of components:
10 H2O2:10 HBr:80 EG characterized by small etching
and high polishing ability. We recommend holding the
etching mixture for 2 hours in order to achieve the
maximum concentration of free bromine, which is
formed during interaction of etching components. The
CMP process of wafers that are prepared in etching
solution with the rate 2 ml/min was carried out for 5 min
at T = 298 K using a cambric tissue covered glass
polisher, and CMP rate do not exceed 20 μm/min
(Table 3).
After CMP process, the samples were immediately
washed in 0.01 M aqueous solution of Na2S2O3, distilled
water and isopropyl alcohol (IPA) using ultrasound (US)
at T = 308 K as follows:
0.01 М Na2S2O3 min1
Н2О min1
Н2О min1
Н2О min5
IPA (US).
Then the samples were dried in air flow. As a result
of our treatment techniques, the shiny polished surface
of ZnSe(I), ZnSe(II), ZnSe(Al) and ZnSe(Te) crystals
was obtained, which was not oxidized against time and
not covered by cloudy films. It was found that the
storage of ZnSe samples after CMP is better in solution
(isopropanol or dimethylformamide) than in air, as the
polished surfaces did not lose their properties for several
months.
Table 3. The CMP rates of undoped and doped ZnSe
crystal surfaces.
Inter-cleaning the ZnSe surface after each stage
of treatment. After each stage of mechanical treatment
carried out surface inter-cleaning of undoped and doped
ZnSe single crystals should be made for removing dirt
from the surface of plates produced during cutting,
grinding and mechanical polishing. At first, to remove
the physical or mechanical contamination (dust, abrasive
particles, metallic materials and semiconductor crumbs,
which are formed during grinding) by rinsing in distilled
water with addition of surface-active substances.
Removing organic contaminants (grease, glue, residues,
suspension, and fingerprint) was conducted by
degreasing in organic solvents (ethanol, acetone), after
which the crystals should be thoroughly dried in flow of
purified air before the following technological
operations.
The crystal dissolution rates were registered by
reducing its thickness before and after etching with an
electronic indicator TESA DIGICO 400 with an
accuracy ±0.2 μm.
The investigation of ZnSe surface state after
different stages of mechanical and chemical treatments
were carried out using the universal stage microscope
ZEISS JENATECH INSPECTION with a digital
camcorder with magnification from 25× to 1600×.
Crystal surface morphology was studied at room
temperature by atomic force microscope (AFM) Nano
Scope IIIa Digital Instrument company using the
periodic contact mode. The silicon probes NCH-50 with
a nominal tip radius of curvature ≈10 nm, with the
resonance frequency of 320 kHz, and console stiffness
42 N/m were used for measurements.
3. Results and discussion
When we were studying chemical polishing peculiarities
of undoped and doped ZnSe crystals in Н2О2 – HBr
solutions, it was found that the most perspective for the
creation of polishing etchants with average speeds of
material removal (12-22 μm/min) are solutions
containing 10-16 vol.% H2O2 in HBr. An introduction of
the solvent in such etchant reduces the concentration of
an active component in the solution. As a result, we can
obtain lower polishing rates and significantly better
polishing properties.
For CMP of undoped and aluminum or tellurium
doped zinc selenide samples we have developed the
polishing solution (in vol.%): 10 H2O2:10 HBr:80 EG at
v ≈ 13 μm/min. This etchant is characterized by high
polishing ability and small etching rates (Table 3).
The results of electron microscopy for ZnSe
surface after treatment by CMP methods in solution
Н2О2 – HBr – EG suggest high quality of treated surface
(Fig. 1).
The atomic force microscopy was used to evaluate
the effectiveness of our developed etching compositions.
The results of electron and atomic force microscopy
(Fig. 2) of ZnSe surface after treatment by CMP and
CDP in 10 H2O2:10 HBr:80 EG solution (in vol.%)
Semiconductor The CMP rates, μm/min
ZnSe (I) 17.1
ZnSe (II) 14.5
ZnSe(Al) 13.8
ZnSe(Te) 18.2
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
143
а b
c d
Fig. 1. Surface morphology of crystals: (a) – ZnSe(I), (b) – ZnSe(II), (c) – ZnSe(Al), (d) – ZnSe(Te) after CMP by the
solution (in vol.%) 10 H2O2:10 HBr:80 EG.
а b c
Fig. 2. Atomic force microscopy of the surface after the CMP process in the solution (in vol.%) 10 H2O2:10 HBr: 80 EG to (a)
ZnSe, (b) – ZnSe(Al), (c) – ZnSe(Te).
confirms the high quality of treated surface, because its
roughness parameters corresponding to polished surface
semiconductor materials 2-14 nm (Table 4).
According to profilographic researches of ZnSe
crystals, the surface roughness after chemical treatment
with Н2О2 – HBr – EG solutions from data of different
methods corresponds: after CMP rms = 1.95-6.03 nm,
and after CDP rms = 9.6-13.5 nm.
The results of ZnSe samples AFM after CDP by
solution composition (in vol.%) 16 H2O2: 84 HBr
(Fig. 3) suggest that there is a surface deterioration in
contrast to results obtained after the CMP process. This
may be due to the presence of different dopants in
researched crystals (Al or Te) and their influence on the
process of dissolution of the material.
The appearance of “terraces” can be traced, which
may result from the transition between the blocks or
from wurtzite to sphalerite modification during crystal
growth. The presence of shallow grooves (Fig. 3c) may
indicate the etching of tellurium inclusions. The surface
roughness value for crystals after the CDP process is
slightly higher in comparison with its value after CMP
(Table 4), which may be due to insignificant
deterioration of the surface, and to formation of oxide
film ZnO, and this oxide film is removed by CMP,
probably because of the mechanical component of the
process.
Table 4. Surface roughness of undoped and doped ZnSe
after chemical treatment in the new bromine emerging
etchants.
rms value, nm
Semiconductor
CMP CDP
ZnSe 6.0 13.5
ZnSe (Al) 2.0 11.1
ZnSe (Te) 2.1 9.6
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
144
а b c
Fig. 3. Atomic force microscopy of the surface after the CDP process in the solution (in vol.%) 16 H2O2:84 HBr to (a) – ZnSe,
(b) – ZnSe(Al), (c) – ZnSe(Te).
0 10 20 30 40 50 60 70 80 90
2
4
6
8
10
12
14
16
18
20
22
V
,
m
/m
in
[EG], vol.%
а
0 10 20 30 40 50 60 70 80 90
2
4
6
8
10
12
14
16
18
20
22
V
,
m
/m
in
[EG], vol.%
b
0 10 20 30 40 50 60 70 80 90
2
4
6
8
10
12
14
16
18
20
22
V
,
m
/m
in
[EG], vol.%
c
0 10 20 30 40 50 60 70 80 90
0
2
4
6
8
10
12
14
16
18
20
22
24
V
,
m
/m
in
[EG], vol.%
d
Fig. 4. Dependence of the chemical-mechanical polishing rate of ZnSe(I) (a), ZnSe(II) (b), ZnSe(Al) (c) and ZnSe(Te) (d)
on the EG content in the base etchant (BS composition, in vol.% – 10H2O2:10 HBr:80 ЕG).
When we select an etchant to create on its basis the
polishing compositions for CMP, we should be aware that
due to mechanical component the elimination rate of
semiconductor material surface by this method can be
several times higher in comparison with the same etchant
for CDP. According to the experiment results, the etchant
composition (in vol.%) 10 H2O2:10 HBr:80 EG were
selected as the basic solution (BS) that shows good
polishing properties during CDP.
A certain amount of viscosity modifier – EG was
additionally introduced to the BS in order to develop the
slow polishing etchants for CMP of investigated
materials, to reduce the rate of CMP (decrease in the
active component content) and to improve the surface
quality directly before the CMP process. It was found
(Fig. 4) that the CMP rate was gradually decreased with
increasing the additionally introduced amount of EG to
the basic etchant.
Thus, with increasing the EG content from 20 up to
80 vol.% in BS, the mirror shiny surface of ZnSe
samples was obtained. All etching compositions of this
range have the high polishing properties for both
undoped and doped ZnSe crystals, while the rate of CMP
was decreased from 22.5 to 0.5 μm/min.
According to the Table 5, we can evaluate
expediency of using etching compositions (in vol.%)
(50 – 80)BS : (20 – 50)EG for thinning the
semiconductor wafers to the specified size.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
145
Table 5. Optimized etchants compositions H2O2 – HBr –
solvent for CMP of ZnSe crystals.
Etching rate, μm/minVolumetric
ratio, (vol.%)
[BS] : [ЕG] ZnSe (I) ZnSe (II) ZnSe (Al) ZnSe (Te)
100 BS : 0 ЕG 20.8 21.8 21.3 22.5
80 BS : 20 ЕG 14.8 15.8 14.8 16
70 BS : 30 ЕG 12.5 15 14.5 15
60 BS : 40 ЕG 13 10.8 13 12
50 BS : 50 ЕG 10 17 15.3 10.3
40 BS : 60 ЕG 8.8 8 7.8 2.3
30 BS : 70 ЕG 7 10.8 8 7.8
20 BS : 80 ЕG 3.8 3.5 3.3 0.5
4. Conclusions
We have found that Н2О2 – HBr – EG etchants are stable
in time and keep their polishing properties during
24 hours after preparation. A controlled polishing rate of
these materials within 12…22 μm/min allows
development of polishing etchants for thinning the wafers
to the specified sizes. The methods of electron and atomic
force microscopy confirmed the high quality of the
semiconductors surface after the chemical polishing
process. The series of slow bromine emerging etching
compositions (in vol.%): (20 – 40)BS : (60 – 80)EG were
developed as based on the experimental researches. They
can be used for controlled thinning the plates to the
specified size and finish polishing of single crystals and
thin films. Thus, for CMP of undoped and aluminum or
tellurium doped zinc selenide samples, we have
developed polishing solution composition (in vol.%)
10 H2O2:10 HBr:80 EG at v = 13.8-18.2 μm/min. This
etchant is characterized by a high polishing ability and
small etching rates.
References
1. B.D. Lyft, V.А. Perevosshikov, L.N. Vozmilovа,
I.А. Sverdlin, K.G. Marin, Physical-chemical
Methods of Semiconductors Surface Treatment.
Radio i sviaz’, Мoscow, p. 136, 1982 (in Russian).
2. V.А. Perevoschikov, Chemical and dynamical
processes of semiconductor surface polishing //
Vysokochistye veschestva, 2, p. 5-29 (1995), in
Russian.
3. V.N. Тоmashuk, Z.F. Тоmashyk, Chemical etching
of II-VI semiconductor compounds // Neorgan.
materialy, 29(5), p. 717-718 (1993), in Russian.
4. V.N. Тоmashuk, Z.F. Тоmashyk, Mechanical and
chemical-mechanical treatment of II-VI
semiconductor compounds // Neorgan. materialy,
30(12), p. 1498-1503 (1994), in Russian.
5. V.N. Тоmashuk, Z.F. Тоmashyk, А.V. Lyubchenko,
А.V. Fomin, Liquid phase etching of II-VI
semiconductor compounds and physical-chemical
processes at the interface (Overview) //
Optoelektronika i poluprovodnikovaya tekhnika, 28,
p. 3-15 (1994), in Russian.
6. V.N. Тоmashyk, Selective etching of zinc,
cadmium and mercury chalcogenides // Neorgan.
materialy, 31(3), p. 313-317 (1995), in Russian.
7. V.N. Тоmashuk, Z.F. Тоmashyk, Polishing etching
of II-VI semiconductor compounds // Neorgan.
materialy, 33(12), p. 1451-1455 (1997), in Russian.
8. Z.F. Тоmashyk, V.N. Тоmashuk, Physical-
chemical interaction of II-VI and III-V
semiconductors with etching liquid compositions //
Condensirovannye sredy i mezhfaznye granicy,
4(4), p. 336-341 (2002), in Russian.
9. R. Tenne, H. Flaisher, R. Triboulet, Photo-
electrochemical etching of zinc selenide and non-
uniform charge flow in Schottky barriers // Phys.
Rev. B: Condens. Matter, 10, p. 5799-5804 (1984).
10. W.C. Hughes, C. Boney, M.A.L. Johnson et al.,
Surface preparation of ZnSe substrates for MBE
growth of V-VI light emitters // J. Cryst. Growth,
175/176, p. 546-551 (1997).
11. R. Tenne, R. Haak, R. Triboulet, Electrochemical
photocapacitance of zinc selenide: effect of
photoelectrochemical etching // Berichte Bunsen-
gesellschaft Phys. Chem., 91(6), p. 597-599 (1987).
12. R. Tenne, Y. Mirovsky, Y. Greenstein, D. Cahen
D, Ternary chalcogenide-based photo-
electrochemical cells. II. The n-CdZn2Se4/aqueous
polysulfide system // J. Electrochem. Soc., 129(7),
p. 1506-1512 (1982).
13. A. Sagar, W. Lehmann, I.W. Faust, Etchants for
ZnSe // J. Appl. Phys. 11, p. 5336-5338 (1968).
14. J. Gautron, C. Raisin, P. Lemagson, Optical and
electro-optical behaviour of polished and etched
zinc selenide single crystals // J. Phys. D: Appl.
Phys., 15, p. 153-161 (1982).
15. N. Sankar, K. Ramachandrana, C. Sanjeeviraja,
Growth and characterization of ZnSe and
phosphorus-doped ZnSe single crystals // J. Cryst.
Growth, 235, p. 195-200 (2002).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013. V. 16, N 2. P. 140-145.
PACS 81.65.Cf
Optimization of conditions for treatment of ZnSe crystal surfaces
by chemical etching
V.М. Tomashyk1, А.S. Kravtsova1, Z.F. Tomashyk1, І.B. Stratiychuk1, S.М. Galkin2
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv; e-mail: graceful_anna@mail.ru
2Institute for Scintillation Materials, National Academy of Sciences of Ukraine,
60, Lenin Ave, Kharkiv
Abstract. The process of chemical polishing the undoped and doped ZnSe crystals surface with H2O2 – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H2O2 in HBr solution has been investigated. Surface states after chemical etching have been established using electron and atomic force microscopies, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing the investigated materials has been made. Concentration regions of polishing solutions have been found for various types of ZnSe surface treatment: to remove the damaged layer, to control the etching rate, to obtain samples of a given thickness.
Keywords: semiconductor, zinc selenide, etchant, crystal, chemical-mechanical polishing, chemical-dynamic polishing.
Manuscript received 16.01.13; revised version received 22.02.13; accepted for publication 19.03.13; published online 25.06.13.
1. Introduction
The traditional technology of modern electronics for manufacturing elements of devices with semiconductor II-VI compounds involves the use of abrasive or chemical treatment methods at all stages of their production [1]. In this regard, great importance is the development of defect-free single crystals manufactured technology, which includes transaction oriented cutting plates from monocrystalline ingots, the application workpieces manufacturing of given configuration and obtaining the required wafer surface geometry using chemical mechanical (CMP) and chemical dynamic polishing (CDP) technologies that prevent formation and transformation of defects [2].
Chemical modification of the II-VI semiconductor compounds surfaces is often carried out using bromine containing mixtures [3-8]. To obtain more perfect polished surface of ZnSe crystals, bromine containing etching compositions such as Br2 in methanol or ethanol with different bromine content has been used [9-15] (Table 1). For chemical etching the ZnSe crystals with orientation (111) a solution of 0.4 vol.% Br2/CH3OH at the boiling point can be used [10]. In [11, 12], zinc selenide semiconductor wafers were treated with 2 vol.% solution of Br2 in CH3OH at T = 273-283 K. At the treating of ZnSe surfaces with 0.5 vol.% solution of Br2 in CH3OH, formation of etching pits on the polished plane (111) were observed [13]. In [14], after the previous mechanical treatment of ZnSe (111) crystals with the diamond paste of 0.25-μm graininess, carried out was etching them with the 0.5 vol.% solution of Br2 in CH3OH. The processes of etching the doped ZnSe samples were carried out in the solution that contains 10 vol.% Br2 in C2H5OH for 2 min [15].
Table 1. The etchant compositions for chemical treatment of ZnSe crystals.
1.
0.4% Br2 in CH3OH
Using the hot solution at its boiling point,
the orientation of crystals (111)
[10]
2.
0.5% Br2 in CH3OH
The etching pits are located on a (111) plane
[13]
3.
0.5% Br2 in CH3OH
The pretreatment was performed by diamond paste (0.25 μm), orientation of crystals (111)
[14]
4.
2% Br2 : 98% CH3OH
T = 273-283 K
[9, 11,12]
5.
10% Br2 in C2H5OH
The process of etching was carried out for 2 min
[15]
The high toxicity and difficulty of process conditions, when using the bromine containing etchants, require searching for a new, less toxic and more technological etching compositions with low dissolution rates of semiconductor surfaces. An alternative to bromine containing etchants is bromine emerging compositions, including solutions based on Н2О2 – HBr, which can be used even at 291-298 K. In these mixtures, free bromine is produced in the process of interaction between components disappears. It means that all bromine takes part in the chemical etching.
In this paper, we report peculiarities of the chemical-mechanical etching of undoped and aluminum or tellurium doped ZnSe crystals in Н2О2 – HBr – ethylene glycol (EG) etching compositions and surface morphology after chemical etching, optimization of etchant compositions for semiconductors chemical polishing and technological conditions of CMP to use them in producing materials for making operation elements for optical and electronic devices, and selection of slow zinc selenide polishing compositions for CMP.
2. Experimental
The research was carried out using crystal wafers of undoped ZnSe(I) (without thermal annealing), ZnSe(II) (after thermal annealing) and doped ZnSe(Al) and ZnSe(Te) crystals grown by the Bridgman method.
The surface pretreatment of undoped and doped ZnSe before chemical polishing process included the following operations:
–
cutting the relevant crystal ingots to wafers;
–
mechanical treatment of surface (polishing with abrasives, mechanical polishing);
–
removing the surface damaged layer by CMP;
–
surface inter-cleaning after each stage of treatment.
For each of these steps we have developed the technological modes and recommendations to these operations.
Cutting the crystal ingots to wafers. According to our methods, the samples of undoped and doped ZnSe crystals were cut from grown single crystal ingots in a special unit by cutting wire with a diamond coating. The process was performed on stall at the following technological conditions (the string was moisten with distilled water in the cutting process): the diameter of the wire string 300 μm; speed of its motion 0.5 m/s; load on a crystal 15 g; process duration 10 to 20 min; cutting width 350 mm, while the rate of crystal cutting was 200 mm/min.
The investigated samples were cut with a 1.2 mm thickness; the area of the substrate was not less than 25 mm2. The semiconductor cutting was followed by an intensive mechanical effect on the crystal, and, as the result, the obtained surface contained irregularities and damaged layer of different thickness that depends on the material nature. These irregularities and damaged layer can be partially removed by mechanical polishing. According to preliminary assessments, the damaged layer of ZnSe surface was 50-60 μm as a result of cutting by the developed method, while after cutting ZnSe with a diamond wheel, it is much larger and reaches 100…150 μm) [1, 2].
Mechanical polishing the samples. Polishing ZnSe(I), ZnSe(II), ZnSe(Al), ZnSe(Te) plates after cutting by our developed method should be performed using abrasive powder with grain sizes M 10, M 5 and M 1, or diamond powders ASM 28/20, ASM 10/7, ASM 5/3, ASM 3/2, ASM 2/1 and ASM 1/0. The polishing mixture is prepared in the form of abrasive powders aqueous suspensions with distilled water. The process should be carried out on a glass grinder, alternately treating the plate with both sides within 1-5 min by each abrasive (in order to decrease abrasive grit) depending on the thickness of the damaged layer that must be removed. After this, the samples should be thoroughly washed with warm distilled water using the addition of a small amount of detergent, then several times with distilled water and dried in air. The elimination rate of the surface layer was different depending on the nature of these materials and abrasive grit (Table 2). The ZnSe(Al) material elimination rate was 6 μm/min when we made polishing by abrasive diamond powders ASM 28/20, and by powder ASM 5/3 amounts to 4 μm/min. For ZnSe(Te) crystals the surface layer elimination rate with abrasives ASM 28/20 is equal to 18 μm/min and 2 μm/min with diamond powder ASM 5/3.
This small surface layer elimination rate of ZnSe(Al) samples may be related to the fact that these crystals were thermally annealed in atmosphere of zinc, and ZnSe (Te) crystals were prepared without thermal annealing. After mechanical polishing of undoped and doped ZnSe, the damaged layer thickness was about 10 to 30 μm [1], and the layer can be removed using CMP.
Table 2. The elimination rates of ZnSe crystals surface layer during mechanical polishing by free abrasives.
Semiconductor
The elimination rate of the surface layer, μm/min
М10
М5
ZnSe (I)
154.5
47
ZnSe (II)
145.5
30
ZnSe(Al)
109
67
ZnSe(Te)
89.5
71
Chemical-mechanical polising. Elimination of the surface damaged layer should be carried out using the CMP method. To make the CMP process for ZnSe(I), ZnSe(II), ZnSe(Al), ZnSe(Te) samples, we developed polishing solution at a volume ratio of components: 10 H2O2:10 HBr:80 EG characterized by small etching and high polishing ability. We recommend holding the etching mixture for 2 hours in order to achieve the maximum concentration of free bromine, which is formed during interaction of etching components. The CMP process of wafers that are prepared in etching solution with the rate 2 ml/min was carried out for 5 min at T = 298 K using a cambric tissue covered glass polisher, and CMP rate do not exceed 20 μm/min (Table 3).
After CMP process, the samples were immediately washed in 0.01 M aqueous solution of Na2S2O3, distilled water and isopropyl alcohol (IPA) using ultrasound (US) at T = 308 K as follows:
0.01 М Na2S2O3
¾
¾
®
¾
min
1
Н2О
¾
¾
®
¾
min
1
Н2О
¾
¾
®
¾
min
1
Н2О
¾
¾
®
¾
min
5
IPA (US).
Then the samples were dried in air flow. As a result of our treatment techniques, the shiny polished surface of ZnSe(I), ZnSe(II), ZnSe(Al) and ZnSe(Te) crystals was obtained, which was not oxidized against time and not covered by cloudy films. It was found that the storage of ZnSe samples after CMP is better in solution (isopropanol or dimethylformamide) than in air, as the polished surfaces did not lose their properties for several months.
Table 3. The CMP rates of undoped and doped ZnSe crystal surfaces.
Semiconductor
The CMP rates, μm/min
ZnSe (I)
17.1
ZnSe (II)
14.5
ZnSe(Al)
13.8
ZnSe(Te)
18.2
Inter-cleaning the ZnSe surface after each stage of treatment. After each stage of mechanical treatment carried out surface inter-cleaning of undoped and doped ZnSe single crystals should be made for removing dirt from the surface of plates produced during cutting, grinding and mechanical polishing. At first, to remove the physical or mechanical contamination (dust, abrasive particles, metallic materials and semiconductor crumbs, which are formed during grinding) by rinsing in distilled water with addition of surface-active substances. Removing organic contaminants (grease, glue, residues, suspension, and fingerprint) was conducted by degreasing in organic solvents (ethanol, acetone), after which the crystals should be thoroughly dried in flow of purified air before the following technological operations.
The crystal dissolution rates were registered by reducing its thickness before and after etching with an electronic indicator TESA DIGICO 400 with an accuracy ±0.2 μm.
The investigation of ZnSe surface state after different stages of mechanical and chemical treatments were carried out using the universal stage microscope ZEISS JENATECH INSPECTION with a digital camcorder with magnification from 25× to 1600×.
Crystal surface morphology was studied at room temperature by atomic force microscope (AFM) Nano Scope IIIa Digital Instrument company using the periodic contact mode. The silicon probes NCH-50 with a nominal tip radius of curvature ≈10 nm, with the resonance frequency of 320 kHz, and console stiffness 42 N/m were used for measurements.
3. Results and discussion
When we were studying chemical polishing peculiarities of undoped and doped ZnSe crystals in Н2О2 – HBr solutions, it was found that the most perspective for the creation of polishing etchants with average speeds of material removal (12-22 μm/min) are solutions containing 10-16 vol.% H2O2 in HBr. An introduction of the solvent in such etchant reduces the concentration of an active component in the solution. As a result, we can obtain lower polishing rates and significantly better polishing properties.
For CMP of undoped and aluminum or tellurium doped zinc selenide samples we have developed the polishing solution (in vol.%): 10 H2O2:10 HBr:80 EG at v ≈ 13 μm/min. This etchant is characterized by high polishing ability and small etching rates (Table 3).
The results of electron microscopy for ZnSe surface after treatment by CMP methods in solution Н2О2 – HBr – EG suggest high quality of treated surface (Fig. 1).
The atomic force microscopy was used to evaluate the effectiveness of our developed etching compositions. The results of electron and atomic force microscopy (Fig. 2) of ZnSe surface after treatment by CMP and CDP in 10 H2O2:10 HBr:80 EG solution (in vol.%) confirms the high quality of treated surface, because its roughness parameters corresponding to polished surface semiconductor materials 2-14 nm (Table 4).
According to profilographic researches of ZnSe crystals, the surface roughness after chemical treatment with Н2О2 – HBr – EG solutions from data of different methods corresponds: after CMP rms = 1.95-6.03 nm, and after CDP rms = 9.6-13.5 nm.
The results of ZnSe samples AFM after CDP by solution composition (in vol.%) 16 H2O2: 84 HBr (Fig. 3) suggest that there is a surface deterioration in contrast to results obtained after the CMP process. This may be due to the presence of different dopants in researched crystals (Al or Te) and their influence on the process of dissolution of the material.
The appearance of “terraces” can be traced, which may result from the transition between the blocks or from wurtzite to sphalerite modification during crystal growth. The presence of shallow grooves (Fig. 3c) may indicate the etching of tellurium inclusions. The surface roughness value for crystals after the CDP process is slightly higher in comparison with its value after CMP (Table 4), which may be due to insignificant deterioration of the surface, and to formation of oxide film ZnO, and this oxide film is removed by CMP, probably because of the mechanical component of the process.
Table 4. Surface roughness of undoped and doped ZnSe after chemical treatment in the new bromine emerging etchants.
Semiconductor
rms value, nm
CMP
CDP
ZnSe
6.0
13.5
ZnSe (Al)
2.0
11.1
ZnSe (Te)
2.1
9.6
When we select an etchant to create on its basis the polishing compositions for CMP, we should be aware that due to mechanical component the elimination rate of semiconductor material surface by this method can be several times higher in comparison with the same etchant for CDP. According to the experiment results, the etchant composition (in vol.%) 10 H2O2:10 HBr:80 EG were selected as the basic solution (BS) that shows good polishing properties during CDP.
A certain amount of viscosity modifier – EG was additionally introduced to the BS in order to develop the slow polishing etchants for CMP of investigated materials, to reduce the rate of CMP (decrease in the active component content) and to improve the surface quality directly before the CMP process. It was found (Fig. 4) that the CMP rate was gradually decreased with increasing the additionally introduced amount of EG to the basic etchant.
Thus, with increasing the EG content from 20 up to 80 vol.% in BS, the mirror shiny surface of ZnSe samples was obtained. All etching compositions of this range have the high polishing properties for both undoped and doped ZnSe crystals, while the rate of CMP was decreased from 22.5 to 0.5 μm/min.
According to the Table 5, we can evaluate expediency of using etching compositions (in vol.%)
(50 – 80)BS : (20 – 50)EG for thinning the semiconductor wafers to the specified size.
Table 5. Optimized etchants compositions H2O2 – HBr – solvent for CMP of ZnSe crystals.
Volumetric ratio, (vol.%)
[BS] : [ЕG]
Etching rate, μm/min
ZnSe (I)
ZnSe (II)
ZnSe (Al)
ZnSe (Te)
100 BS : 0 ЕG
20.8
21.8
21.3
22.5
80 BS : 20 ЕG
14.8
15.8
14.8
16
70 BS : 30 ЕG
12.5
15
14.5
15
60 BS : 40 ЕG
13
10.8
13
12
50 BS : 50 ЕG
10
17
15.3
10.3
40 BS : 60 ЕG
8.8
8
7.8
2.3
30 BS : 70 ЕG
7
10.8
8
7.8
20 BS : 80 ЕG
3.8
3.5
3.3
0.5
4. Conclusions
We have found that Н2О2 – HBr – EG etchants are stable in time and keep their polishing properties during 24 hours after preparation. A controlled polishing rate of these materials within 12…22 μm/min allows development of polishing etchants for thinning the wafers to the specified sizes. The methods of electron and atomic force microscopy confirmed the high quality of the semiconductors surface after the chemical polishing process. The series of slow bromine emerging etching compositions (in vol.%): (20 – 40)BS : (60 – 80)EG were developed as based on the experimental researches. They can be used for controlled thinning the plates to the specified size and finish polishing of single crystals and thin films. Thus, for CMP of undoped and aluminum or tellurium doped zinc selenide samples, we have developed polishing solution composition (in vol.%) 10 H2O2:10 HBr:80 EG at v = 13.8-18.2 μm/min. This etchant is characterized by a high polishing ability and small etching rates.
References
1.
B.D. Lyft, V.А. Perevosshikov, L.N. Vozmilovа, I.А. Sverdlin, K.G. Marin, Physical-chemical Methods of Semiconductors Surface Treatment. Radio i sviaz’, Мoscow, p. 136, 1982 (in Russian).
2.
V.А. Perevoschikov, Chemical and dynamical processes of semiconductor surface polishing // Vysokochistye veschestva, 2, p. 5-29 (1995), in Russian.
3.
V.N. Тоmashuk, Z.F. Тоmashyk, Chemical etching of II-VI semiconductor compounds // Neorgan. materialy, 29(5), p. 717-718 (1993), in Russian.
4.
V.N. Тоmashuk, Z.F. Тоmashyk, Mechanical and chemical-mechanical treatment of II-VI semiconductor compounds // Neorgan. materialy, 30(12), p. 1498-1503 (1994), in Russian.
5.
V.N. Тоmashuk, Z.F. Тоmashyk, А.V. Lyubchenko, А.V. Fomin, Liquid phase etching of II-VI semiconductor compounds and physical-chemical processes at the interface (Overview) // Optoelektronika i poluprovodnikovaya tekhnika, 28, p. 3-15 (1994), in Russian.
6.
V.N. Тоmashyk, Selective etching of zinc, cadmium and mercury chalcogenides // Neorgan. materialy, 31(3), p. 313-317 (1995), in Russian.
7.
V.N. Тоmashuk, Z.F. Тоmashyk, Polishing etching of II-VI semiconductor compounds // Neorgan. materialy, 33(12), p. 1451-1455 (1997), in Russian.
8.
Z.F. Тоmashyk, V.N. Тоmashuk, Physical-chemical interaction of II-VI and III-V semiconductors with etching liquid compositions // Condensirovannye sredy i mezhfaznye granicy, 4(4), p. 336-341 (2002), in Russian.
9.
R. Tenne, H. Flaisher, R. Triboulet, Photoelectrochemical etching of zinc selenide and non-uniform charge flow in Schottky barriers // Phys. Rev. B: Condens. Matter, 10, p. 5799-5804 (1984).
10.
W.C. Hughes, C. Boney, M.A.L. Johnson et al., Surface preparation of ZnSe substrates for MBE growth of V-VI light emitters // J. Cryst. Growth, 175/176, p. 546-551 (1997).
11.
R. Tenne, R. Haak, R. Triboulet, Electrochemical photocapacitance of zinc selenide: effect of photoelectrochemical etching // Berichte Bunsengesellschaft Phys. Chem., 91(6), p. 597-599 (1987).
12.
R. Tenne, Y. Mirovsky, Y. Greenstein, D. Cahen D, Ternary chalcogenide-based photo-electrochemical cells. II. The n-CdZn2Se4/aqueous polysulfide system // J. Electrochem. Soc., 129(7), p. 1506-1512 (1982).
13.
A. Sagar, W. Lehmann, I.W. Faust, Etchants for ZnSe // J. Appl. Phys. 11, p. 5336-5338 (1968).
14.
J. Gautron, C. Raisin, P. Lemagson, Optical and electro-optical behaviour of polished and etched zinc selenide single crystals // J. Phys. D: Appl. Phys., 15, p. 153-161 (1982).
15.
N. Sankar, K. Ramachandrana, C. Sanjeeviraja, Growth and characterization of ZnSe and phosphorus-doped ZnSe single crystals // J. Cryst. Growth, 235, p. 195-200 (2002).
�
а�
�
b�
�
c�
�
Fig. 3. Atomic force microscopy of the surface after the CDP process in the solution (in vol.%) 16 H2O2:84 HBr to (a) – ZnSe, (b) – ZnSe(Al), (c) – ZnSe(Te).
�
�
� EMBED Origin50.Graph ���
а�
� EMBED Origin50.Graph ���
b�
�
� EMBED Origin50.Graph ���
c�
� EMBED Origin50.Graph ���
d�
�
Fig. 4. Dependence of the chemical-mechanical polishing rate of ZnSe(I) (a), ZnSe(II) (b), ZnSe(Al) (c) and ZnSe(Te) (d) on the EG content in the base etchant (BS composition, in vol.% – 10H2O2:10 HBr:80 ЕG).
�
�
�
а�
�
b�
�
�
c�
�
d�
�
Fig. 1. Surface morphology of crystals: (a) – ZnSe(I), (b) – ZnSe(II), (c) – ZnSe(Al), (d) – ZnSe(Te) after CMP by the solution (in vol.%) 10 H2O2:10 HBr:80 EG.�
�
�
а�
�
b�
�
c�
�
Fig. 2. Atomic force microscopy of the surface after the CMP process in the solution (in vol.%) 10 H2O2:10 HBr: 80 EG to (a) – ZnSe, (b) – ZnSe(Al), (c) – ZnSe(Te).�
�
© 2013, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
140
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
18
20
22
V,
m
m/min
[EG],
vol.%
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
18
20
22
V,
m
m
/min
[EG],
vol.%
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
18
20
22
V,
m
m
/min
[EG],
vol.%
0
10
20
30
40
50
60
70
80
90
0
2
4
6
8
10
12
14
16
18
20
22
24
V,
m
m
/min
[EG],
vol.%
_1422810719.unknown
_1427630346.bin
_1427630364.bin
_1427630379.bin
_1427630287.bin
_1422810673.unknown
_1422810705.unknown
_1422810640.unknown
|