Low-temperature deposition of silicon dioxide films in high-density plasma
One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can...
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| Datum: | 2013 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117696 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Low-temperature deposition of silicon dioxide films in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | One of the basic operations in the LED (light-emitting diode) chip fabrication
technique is formation of dielectric coatings for the purpose of insulation and surface
passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
chemical vapor deposition techniques can act as such a coating. Low conformity of
physical vapor deposition techniques limits the possibility of their application in a
number of cases at LED mesostructures passivation. This work represents the results of
experiments on silicon dioxide dielectric films deposition in the inductive coupled
plasma under different operation conditions. The findings prove the possibility of lowtemperature
deposition of thick silicon dioxide films with high conformality by the
HDPCVD (high-density plasma chemical vapor deposition) technique. |
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