Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation
The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type “implanted layer + crystalline Si substrate” as a result of its irradiation by one...
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| Datum: | 2011 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117708 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 167-169. — Бібліогр.: 4 назв. — англ. |