Influence of electron-electron drag on piezoresistance of n-Si
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature fal...
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| Datum: | 2011 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117714 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1177142017-05-27T03:05:36Z Influence of electron-electron drag on piezoresistance of n-Si Boiko, I.I. Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls. 2011 Article Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72, 72.20 http://dspace.nbuv.gov.ua/handle/123456789/117714 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Influence of electron-electron drag on piezoresistance of n-Si Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Influence of electron-electron drag on piezoresistance of n-Si |
| title_short |
Influence of electron-electron drag on piezoresistance of n-Si |
| title_full |
Influence of electron-electron drag on piezoresistance of n-Si |
| title_fullStr |
Influence of electron-electron drag on piezoresistance of n-Si |
| title_full_unstemmed |
Influence of electron-electron drag on piezoresistance of n-Si |
| title_sort |
influence of electron-electron drag on piezoresistance of n-si |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117714 |
| citation_txt |
Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT boikoii influenceofelectronelectrondragonpiezoresistanceofnsi |
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2025-07-08T12:40:36Z |
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2025-07-08T12:40:36Z |
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1837082541818904576 |