Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing
The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal annealing have been used to form nanocomposite SiO₂(Si) films. The structur...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117723 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing / O.L. Bratus, A.A. Evtukh, O.S. Lytvyn, M.V. Voitovych, V.О. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 247-255. — Бібліогр.: 24 назв. — англ. |