Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by...

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Datum:	2013
1. Verfasser:	Sheremet, V.N.
Format:	Artikel
Sprache:	English
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Schriftenreihe:	Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:	http://dspace.nbuv.gov.ua/handle/123456789/117729
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ.

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