On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃
The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases al...
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| Datum: | 2013 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117735 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The temperature dependences of the unit cell parameters a(T) and c(T) of
Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the
temperature range 100 to 300 K in the dark mode and under laser irradiation (λ =
532 nm). It was found that the parameter c increases almost linear with decreasing the
temperature from 300 down to 100 K for samples in the dark. At the same time, for
samples that were exposed during cooling to laser irradiation, the increase of the
parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp =
145…147 K. This leap is typical for systems in which a phase transition of the first order
occurs. Furthermore, there were investigated temperature dependences of the integral
relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and
under laser irradiation. It was established the character of the dependence I(T) for these
reflexes was changed significantly by laser irradiation. |
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