Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stac...
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| Date: | 2010 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117746 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The type, density, and distribution of defects in initial and oxidated
monocrystalline silicon wafers were studied by modern methods. It was established that
disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
monocrystalline silicon. It was shown that stacking faults are generated during the
oxidation process, and the mechanism of their formation is connected with the defective
layered structure of initial silicon wafers. It was established that defects of layered
heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other
hand, prevent their propagation to the wafer bulk. |
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