Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stac...
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| Datum: | 2010 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117746 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |