Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity a...
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| Datum: | 2010 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117747 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
current passage redistribution of electroluminescence intensity on the structure surface
takes place simultaneously with radiation of acoustic emission. Local (on surface area)
fluctuations of electroluminescence intensity are observed together with general
degradation of electro-physical parameters. |
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