Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges
It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in...
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| Datum: | 2011 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117757 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges / Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 298-301. — Бібліогр.: 10 назв. — англ. |