Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were pre...
Gespeichert in:
| Datum: | 2011 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117764 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117764 |
|---|---|
| record_format |
dspace |
| fulltext |
|
| spelling |
irk-123456789-1177642017-05-27T03:06:44Z Characterization of quaternary chalcogenide As-Ge-Te-Si thin films Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation of bulk samples. Increasing Si content was found to affect the average heat of atomization, average coordination number, number of constraints and cohesive energy of the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition, and the energy gap increases with increasing Si content. The chemical bond approach has been applied successfully to interpret the increase in the optical gap with increasing silicon content. 2011 Article Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS 61.80.-x, 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/117764 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Investigated in this paper is the effect of replacement of Te by Si on the optical
gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the
thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation
of bulk samples. Increasing Si content was found to affect the average heat of
atomization, average coordination number, number of constraints and cohesive energy of
the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition,
and the energy gap increases with increasing Si content. The chemical bond approach has
been applied successfully to interpret the increase in the optical gap with increasing
silicon content. |
| format |
Article |
| author |
Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. |
| spellingShingle |
Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. Characterization of quaternary chalcogenide As-Ge-Te-Si thin films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Amer, H.H. Elkordy, M. Zien, M. Dahshan, A. Elshamy, R.A. |
| author_sort |
Amer, H.H. |
| title |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_short |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_full |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_fullStr |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_full_unstemmed |
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films |
| title_sort |
characterization of quaternary chalcogenide as-ge-te-si thin films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117764 |
| citation_txt |
Characterization of quaternary chalcogenide
As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT amerhh characterizationofquaternarychalcogenideasgetesithinfilms AT elkordym characterizationofquaternarychalcogenideasgetesithinfilms AT zienm characterizationofquaternarychalcogenideasgetesithinfilms AT dahshana characterizationofquaternarychalcogenideasgetesithinfilms AT elshamyra characterizationofquaternarychalcogenideasgetesithinfilms |
| first_indexed |
2025-07-08T12:45:48Z |
| last_indexed |
2025-07-08T12:45:48Z |
| _version_ |
1837082872034361344 |