Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium
Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient influence on both effects.
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| Datum: | 2011 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117793 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 437-440. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Hall-effect and magnetoresistivity of holes in silicon and germanium are
considered with due regard for mutual drag of light and heavy band carriers. Search of
contribution of this drag shows that this interaction has a sufficient influence on both
effects. |
|---|