Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorpti...
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| Datum: | 2013 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117814 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The optical transmissions spectra of amorphous Ge-S-Se films of chemical
compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
that annealing of the films leads to the absorption edge shift into the short-wave spectral
region. The values of pseudo-gap width Eg and film refraction index n have been
determined. Changes in optical properties of films are caused by structural
transformations taking place in them under laser illumination and annealing. |
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