Graphene layers fabricated from the Ni/a-SiC bilayer precursor

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The lateral size of graphene flakes was estimated to be about h...

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Дата:2013
Автори: Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117818
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1178182017-05-27T03:05:13Z Graphene layers fabricated from the Ni/a-SiC bilayer precursor Nazarov, A.N. Vasin, A.V. Gordienko, S.O. Lytvyn, P.M. Strelchuk, V.V. Nikolenko, A.S. Stubrov, Yu.Yu. Hirov, A.S. Rusavsky, A.V. Popov, V.P. Lysenko, V.S. This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The lateral size of graphene flakes was estimated to be about hundreds of micrometers while the thickness estimated using Raman scattering varied from one to few layers in case of vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in formation of multilayer graphene with surface covering up to 80%. The graphene layers synthesized on Ni during CVD process was used as reference samples. Atomic force microscopy (AFM) is not able to detect graphene flakes in regime of surface topology examination because of large roughness of Ni surface. Employment of scanning Kelvin probe force microscopy (SKPFM) demonstrates correlation of the surface potential and graphene flakes visible in optical microscopy. Using the KPFM method, potential differences between Ni and graphene were determined. 2013 Article Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 68.37.Ps, 78.67.Wj http://dspace.nbuv.gov.ua/handle/123456789/117818 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The lateral size of graphene flakes was estimated to be about hundreds of micrometers while the thickness estimated using Raman scattering varied from one to few layers in case of vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in formation of multilayer graphene with surface covering up to 80%. The graphene layers synthesized on Ni during CVD process was used as reference samples. Atomic force microscopy (AFM) is not able to detect graphene flakes in regime of surface topology examination because of large roughness of Ni surface. Employment of scanning Kelvin probe force microscopy (SKPFM) demonstrates correlation of the surface potential and graphene flakes visible in optical microscopy. Using the KPFM method, potential differences between Ni and graphene were determined.
format Article
author Nazarov, A.N.
Vasin, A.V.
Gordienko, S.O.
Lytvyn, P.M.
Strelchuk, V.V.
Nikolenko, A.S.
Stubrov, Yu.Yu.
Hirov, A.S.
Rusavsky, A.V.
Popov, V.P.
Lysenko, V.S.
spellingShingle Nazarov, A.N.
Vasin, A.V.
Gordienko, S.O.
Lytvyn, P.M.
Strelchuk, V.V.
Nikolenko, A.S.
Stubrov, Yu.Yu.
Hirov, A.S.
Rusavsky, A.V.
Popov, V.P.
Lysenko, V.S.
Graphene layers fabricated from the Ni/a-SiC bilayer precursor
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nazarov, A.N.
Vasin, A.V.
Gordienko, S.O.
Lytvyn, P.M.
Strelchuk, V.V.
Nikolenko, A.S.
Stubrov, Yu.Yu.
Hirov, A.S.
Rusavsky, A.V.
Popov, V.P.
Lysenko, V.S.
author_sort Nazarov, A.N.
title Graphene layers fabricated from the Ni/a-SiC bilayer precursor
title_short Graphene layers fabricated from the Ni/a-SiC bilayer precursor
title_full Graphene layers fabricated from the Ni/a-SiC bilayer precursor
title_fullStr Graphene layers fabricated from the Ni/a-SiC bilayer precursor
title_full_unstemmed Graphene layers fabricated from the Ni/a-SiC bilayer precursor
title_sort graphene layers fabricated from the ni/a-sic bilayer precursor
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117818
citation_txt Graphene layers fabricated from the Ni/a-SiC bilayer precursor / A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, Yu.Yu. Stubrov, A.S. Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 322-330. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-07-08T12:52:08Z
last_indexed 2025-07-08T12:52:08Z
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