Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formati...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2013
Автори: Neimash, V.B., Poroshin, V.M., Shepeliavyi, P.Ye., Yukhymchuk, V.O., Melnyk, V.V., Makara, M.A., Kuzmich, A.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117819
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117819
record_format dspace
fulltext
spelling irk-123456789-1178192017-05-27T03:04:24Z Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4- nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon. 2013 Article Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.66.Dk, -f; 61.72.Cc, J-, Tt; 61.82.Fk; 71.55.Cn http://dspace.nbuv.gov.ua/handle/123456789/117819 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4- nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon.
format Article
author Neimash, V.B.
Poroshin, V.M.
Shepeliavyi, P.Ye.
Yukhymchuk, V.O.
Melnyk, V.V.
Makara, M.A.
Kuzmich, A.G.
spellingShingle Neimash, V.B.
Poroshin, V.M.
Shepeliavyi, P.Ye.
Yukhymchuk, V.O.
Melnyk, V.V.
Makara, M.A.
Kuzmich, A.G.
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Neimash, V.B.
Poroshin, V.M.
Shepeliavyi, P.Ye.
Yukhymchuk, V.O.
Melnyk, V.V.
Makara, M.A.
Kuzmich, A.G.
author_sort Neimash, V.B.
title Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
title_short Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
title_full Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
title_fullStr Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
title_full_unstemmed Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
title_sort tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117819
citation_txt Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT neimashvb tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT poroshinvm tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT shepeliavyipye tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT yukhymchukvo tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT melnykvv tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT makarama tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
AT kuzmichag tindopingeffectoncrystallizationofamorphoussiliconobtainedbyvapordepositioninvacuum
first_indexed 2025-07-08T12:52:13Z
last_indexed 2025-07-08T12:52:13Z
_version_ 1837083276118851584