Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formati...
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Дата: | 2013 |
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Автори: | , , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117819 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. |
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irk-123456789-1178192017-05-27T03:04:24Z Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4- nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon. 2013 Article Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.66.Dk, -f; 61.72.Cc, J-, Tt; 61.82.Fk; 71.55.Cn http://dspace.nbuv.gov.ua/handle/123456789/117819 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The influence of tin impurity on amorphous silicon crystallization was
investigated using the methods of Raman scattering, Auger spectroscopy at ion etching,
scanning electron microscopy and X-ray fluorescence microanalysis in thin films of
Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-
nm size has been found in the amorphous matrix alloy formed at the temperature 300 C.
Total volume of nanocrystals correlates with the content of tin and can comprise as much
as 80% of the film. The effect of tin-induced crystallization of amorphous silicon
occurred only if there are clusters of metallic tin in the amorphous matrix. The
mechanism of tin-induced crystallization of silicon that has been proposed takes into
account the processes in eutectic layer at the interface metal tin – amorphous silicon. |
format |
Article |
author |
Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
spellingShingle |
Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Neimash, V.B. Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
author_sort |
Neimash, V.B. |
title |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
title_short |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
title_full |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
title_fullStr |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
title_full_unstemmed |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
title_sort |
tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2013 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/117819 |
citation_txt |
Tin doping effect on crystallization of amorphous silicon
obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2025-07-08T12:52:13Z |
last_indexed |
2025-07-08T12:52:13Z |
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