Amplification of localized acoustic waves by the electron drift in a quantum well
We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for...
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| Дата: | 1999 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117857 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1178572017-05-28T03:02:30Z Amplification of localized acoustic waves by the electron drift in a quantum well Demidenko, A. A. Kochelap, V. A. We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for the localized waves. For electrons into the layer we have supposed that parallel transport is semiclassical, while perpendicular electron motion is quantized. For two-dimensional confined electrons interacting with the acoustic waves we have solved the Boltzmann equation in a parallel electric field. The solutions have been found for electron-phonon interaction via deformation potential. The dispersion relation for coupled charge density and acoustic waves has been analyzed. We have established conditions of amplification of localized acoustic waves under the electron drift for two extreme cases: i) the only lowest two-dimensional subband is populated, ii) a large number of the subbands are populated. We have found that the amplification coefficient of the acoustic waves in THz-rigion is of the order of 100 cm⁻¹. We have discussed the results and compared them with acoustic waves amplification in bulk like semiconductors. 1999 Article Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 63.22, 72.20, 73.20.D http://dspace.nbuv.gov.ua/handle/123456789/117857 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for the localized waves. For electrons into the layer we have supposed that parallel transport is semiclassical, while perpendicular electron motion is quantized. For two-dimensional confined electrons interacting with the acoustic waves we have solved the Boltzmann equation in a parallel electric field. The solutions have been found for electron-phonon interaction via deformation potential. The dispersion relation for coupled charge density and acoustic waves has been analyzed. We have established conditions of amplification of localized acoustic waves under the electron drift for two extreme cases: i) the only lowest two-dimensional subband is populated, ii) a large number of the subbands are populated. We have found that the amplification coefficient of the acoustic waves in THz-rigion is of the order of 100 cm⁻¹. We have discussed the results and compared them with acoustic waves amplification in bulk like semiconductors. |
| format |
Article |
| author |
Demidenko, A. A. Kochelap, V. A. |
| spellingShingle |
Demidenko, A. A. Kochelap, V. A. Amplification of localized acoustic waves by the electron drift in a quantum well Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Demidenko, A. A. Kochelap, V. A. |
| author_sort |
Demidenko, A. A. |
| title |
Amplification of localized acoustic waves by the electron drift in a quantum well |
| title_short |
Amplification of localized acoustic waves by the electron drift in a quantum well |
| title_full |
Amplification of localized acoustic waves by the electron drift in a quantum well |
| title_fullStr |
Amplification of localized acoustic waves by the electron drift in a quantum well |
| title_full_unstemmed |
Amplification of localized acoustic waves by the electron drift in a quantum well |
| title_sort |
amplification of localized acoustic waves by the electron drift in a quantum well |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117857 |
| citation_txt |
Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT demidenkoaa amplificationoflocalizedacousticwavesbytheelectrondriftinaquantumwell AT kochelapva amplificationoflocalizedacousticwavesbytheelectrondriftinaquantumwell |
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2025-07-08T12:54:35Z |
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2025-07-08T12:54:35Z |
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