Boron, aluminum, nitrogen, oxygen impurities in silicon carbide
Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during 2 h at 1700 °C, with aluminum and silicon oxide powder during 2 h, and with...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117865 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Boron, aluminum, nitrogen, oxygen impurities in silicon carbide / S.I. Vlaskina, V.I. Vlaskin, S.A. Podlasov, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 21-25. — Бібліогр.: 24 назв. — англ. |
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