Overheating effect and hole-phonon interaction in SiGe heterostructures
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The tempera...
Збережено в:
| Дата: | 2008 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2008
|
| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117882 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence
of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations
change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon
relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of
small angle scattering. |
|---|