Charge characteristics of the MOS structures with oxide films containing Si nanocrystals

Charge characteristics of the MOS structures with oxide films containing Si nanocrystals

The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of structures with the different thicknesses of films,...

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Bibliographic Details
Date:2007
Main Authors: Begun, E.V., Bratus’, O.L., Evtukh, A.A., Kaganovich, E.B., Manoilov, E.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117892
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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