Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication
The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was estimated from optical transmission in the spectral region 400 -2500 nm. The n ene...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117930 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication / A.V. Stronski, M. Vlcek, P.E. Shepeliavyi, A. Sklenar, S.A. Kostyukevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 111-114. — Бібліогр.: 7 назв. — англ. |